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1. Quantum Channel Extreme Bandgap AlGaN HEMT

   https://doi.org/10.3390/mi15111384  

   Shur, Michael; Simin, Grigory; Hussain, Kamal; Mamun, Abdullah; Chandrashekhar, M_V S; Khan, Asif (November 2024, Micromachines)

   Wengang, Bi; Haiding, Sun (Ed.)

   An extreme bandgap Al0.64Ga0.36N quantum channel HEMT with Al0.87Ga0.13N top and back barriers, grown by MOCVD on a bulk AlN substrate, demonstrated a critical breakdown field of 11.37 MV/cm—higher than the 9.8 MV/cm expected for the channel’s Al0.64Ga0.36N material. We show that the fraction of this increase is due to the quantization of the 2D electron gas. The polarization field maintains electron quantization in the quantum channel even at low sheet densities, in contrast to conventional HEMT designs. An additional increase in the breakdown field is due to quantum-enabled real space transfer of energetic electrons into high-Al barrier layers in high electric fields. These results show the advantages of the quantum channel design for achieving record-high breakdown voltages and allowing for superior power HEMT devices. 

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2. 3 kV monolithic bidirectional GaN HEMT on sapphire

   https://doi.org/10.35848/1882-0786/ad9b6a  

   Alam, Md Tahmidul; Mukhopadhyay, Swarnav; Haque, Md Mobinul; Pasayat, Shubhra S; Gupta, Chirag (January 2025, Applied Physics Express)

   Abstract 3 kV breakdown voltage was demonstrated in monolithic bidirectional Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) having potential applications in 1200 V or 1700 V class power converters. The on-resistance of the fabricated transistors was ∼20 Ω.mm (∼11 mΩ.cm²). The breakdown voltage was optimized with two field plates on either side of the transistor. Shorter first field plate lengths (≤2 μm) resulted in higher breakdown voltage and the possible reason was discussed. The transistors had a steep subthreshold swing of 92 mV dec⁻¹. The fabricated transistor was benchmarked against the state-of-the-art monolithic bidirectional GaN HEMTs in the performance matrices of breakdown voltage—on resistance, that showed crucial progress. 

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3. Realization of flexible AlGaN/GaN HEMT by laser liftoff

   https://doi.org/10.35848/1882-0786/ac7847  

   Alam, Md Didarul; Hussain, Kamal; Mollah, Shahab; Simin, Grigory; Khan, Asif; Chandrashekhar, MVS (June 2022, Applied Physics Express)

   Abstract We demonstrate fully fabricated AlGaN/GaN high electron mobility transistors (HEMTs) transferred from sapphire to copper tape on flexible polyethylene terephthalate using 193 nm excimer laser liftoff (LLO). The heterojunction is structurally intact after LLO, leading to preserved electron mobility μ n ∼1630 cm 2 V −1 s −1 and carrier concentration n s ∼10 13 cm −2 . The maximum drain saturation current decreased by ∼18% after transfer, which is a lower reduction than other reported transfer methods. The drain current of this flexible HEMT increased monotonically under tensile stress applied using a convex-shaped plate, while the threshold voltage shifted more negative in quantitative agreement with the expected piezoelectric charge for an intact heterojunction. 

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4. Heterogeneous MacroTasking (HeMT) for Parallel Processing in the Cloud

   https://doi.org/10.1145/3429885.3429962  

   Shan, Yuquan; Kesidis, George; Jain, Aman; Urgaonkar, Bhurvan; Khamse-Ashari, Jalal; Lambadaris, Ioannis (December 2020, Workshop on Containers)

   null (Ed.)
5. Ultrasensitive Detection of Lactate Dehydrogenase Using GaN HEMT Sensors

   https://doi.org/10.1021/acsaelm.5c00833  

   Kabir, Md Iqbal; Da, Bingcheng; Mao, Subin; Wang, Dawei; Fu, Houqiang; Que, Long (July 2025, ACS Applied Electronic Materials)