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We study the flexoelectric effect in fifty-four select atomic monolayers using ab initio Density Functional Theory (DFT). Specifically, considering representative materials from each of the Group III monochalcogenides, transition metal dichalcogenides (TMDs), Groups IV, III–V, and V monolayers, Group IV dichalcogenides, Group IV monochalcogenides, transition metal trichalcogenides (TMTs), and Group V chalcogenides, we perform symmetry-adapted DFT simulations to calculate transversal flexoelectric coefficients along the principal directions at practically relevant bending curvatures. We find that the materials demonstrate linear behavior and have similar coefficients along both principal directions, with values for TMTs being up to a factor of five larger than those of graphene. In addition, we find electronic origins for the flexoelectric effect, which increases with monolayer thickness, elastic modulus along the bending direction, and sum of polarizability of constituent atoms.
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Torsional moduli of transition metal dichalcogenide nanotubes from first principles
Abstract We calculate the torsional moduli of single-walled transition metal dichalcogenide (TMD) nanotubes using ab initio density functional theory (DFT). Specifically, considering forty-five select TMD nanotubes, we perform symmetry-adapted DFT calculations to calculate the torsional moduli for the armchair and zigzag variants of these materials in the low-twist regime and at practically relevant diameters. We find that the torsional moduli follow the trend: MS 2 > MSe 2 > MTe 2 . In addition, the moduli display a power law dependence on diameter, with the scaling generally close to cubic, as predicted by the isotropic elastic continuum model. In particular, the shear moduli so computed are in good agreement with those predicted by the isotropic relation in terms of the Young’s modulus and Poisson’s ratio, both of which are also calculated using symmetry-adapted DFT. Finally, we develop a linear regression model for the torsional moduli of TMD nanotubes based on the nature/characteristics of the metal-chalcogen bond, and show that it is capable of making reasonably accurate predictions.
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- Award ID(s):
- 1828187
- PAR ID:
- 10318228
- Date Published:
- Journal Name:
- Nanotechnology
- Volume:
- 32
- Issue:
- 28
- ISSN:
- 0957-4484
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1088/1361-6528/abf59c
