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1. Experimental Forced Response Analysis of Two-Degree-of-Freedom Piecewise-Linear Systems With a Gap

   https://doi.org/10.1115/DETC2020-22289  

   Saito, Akira ; Umemoto, Junta ; Noguchi, Kohei ; Tien, Meng-Hsuan ; D’Souza, Kiran ( August 2020 , ASME 2020 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference)

   null (Ed.)

   In this paper, an experimental forced response analysis for a two degree of freedom piecewise-linear oscillator is discussed. First, a mathematical model of the piecewise linear oscillator is presented. Second, the experimental setup developed for the forced response study is presented. The experimental setup is capable of investigating a two degree of freedom piecewise linear oscillator model. The piecewise linearity is achieved by attaching mechanical stops between two masses that move along common shafts. Forced response tests have been conducted, and the results are presented. Discussion of characteristics of the oscillators are provided based on frequency response, spectrogram, time histories, phase portraits, and Poincaré sections. Period doubling bifurcation has been observed when the excitation frequency changes from a frequency with multiple contacts between the masses to a frequency with single contact between the masses occurs.

    

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2. Energy Exchange between Two Sub-systems Coupled with a Nonlinear Elastic Path

   Sen, O.T. ; Singh, R. ( May 2018 , NOVEM 2018 Conference)

   The chief objective of this paper is to explore energy transfer mechanism between the sub-systems that are coupled by a nonlinear elastic path. In the proposed model (via a minimal order, two degree of freedom system), both sub-systems are defined as damped harmonic oscillators with linear springs and dampers. The first sub-system is attached to the ground on one side but connected to the second sub-system on the other side. In addition, linear elastic and dissipative characteristics of both oscillators are assumed to be identical, and a harmonic force excitation is applied only on the mass element of second oscillator. The nonlinear spring (placed in between the two sub-systems) is assumed to exhibit cubic, hardening type nonlinearity. First, the governing equations of the two degree of freedom system with a nonlinear elastic path are obtained. Second, the nonlinear differential equations are solved with a semi-analytical (multi-term harmonic balance) method, and nonlinear frequency responses of the system are calculated for different path coupling cases. As such, the nonlinear path stiffness is gradually increased so that the stiffness ratio of nonlinear element to the linear element is 0.01, 0.05, 0.1, 0.5 and 1.0 while the absolute value of linear spring stiffness is kept intact. In all solutions, it is observed that the frequency response curves at the vicinity of resonant frequencies bend towards higher frequencies as expected due to the hardening effect. However, at moderate or higher levels of path coupling (say 0.1, 0.5 and 1.0), additional branches emerge in the frequency response curves but only at the first resonant frequency. This is due to higher displacement amplitudes at the first resonant frequency as compared to the second one. Even though the oscillators move in-phase around the first natural frequency, high amplitudes increase the contribution of the stored potential energy in the nonlinear spring to the total mechanical energy. The out-of-phase motion around the second natural frequency cannot significantly contribute due to very low motion amplitudes. Finally, the governing equations are numerically solved for the same levels of nonlinearity, and the motion responses of both sub-systems are calculated. Both in-phase and out-of-phase motion responses are successfully shown in numerical solutions, and phase portraits of the system are generated in order to illustrate its nonlinear dynamics. In conclusion, a better understanding of the effect of nonlinear elastic path on two damped harmonic oscillators is gained. 

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3. Hydrodynamic pressures on rigid walls subjected to cyclic and seismic ground motions

   https://doi.org/10.1002/eqe.4020  

   AlKhatib, Karim ; Hashash, Youssef M. A. ; Ziotopoulou, Katerina ; Morales, Brian ( September 2023 , Earthquake Engineering & Structural Dynamics)

   Seismic design of water retaining structures relies heavily on the response of the retained water to shaking. The water dynamic response has been evaluated by means of analytical, numerical, and experimental approaches. In practice, it is common to use simplified code‐based methods to evaluate the added demands imposed by water sloshing. Yet, such methods were developed with an inherent set of assumptions that might limit their application. Alternatively, numerical modeling methods offer a more accurate way of quantifying the water response and have been commonly validated using 1 g shake table experiments. In this study, a unique series of five centrifuge tests was conducted with the goal of investigating the hydrodynamic behavior of water by varying its height and length. Moreover, sine wave and earthquake motions were applied to examine the water response at different types and levels of excitation. Arbitrary Lagrangian‐Eulerian finite element models were then developed to reproduce 1 g shake table experiments available in the literature in addition to the centrifuge tests conducted in this study. The results of the numerical simulations as well as the simplified and analytical methods were compared to the experimental measurements, in terms of free surface elevation and hydrodynamic pressures, to evaluate their applicability and limitations. The comparison showed that the numerical models were able to reasonably capture the water response of all configurations both under earthquake and sine wave motions. The analytical solutions performed well except for cases with resonance under harmonic motions. As for the simplified methods, they provided acceptable results for the peak responses under earthquake motions. However, under sine wave motions, where convective sloshing is significant, they underpredict the response. Also, beyond peak ground accelerations of 0.5 g., a mild nonlinear increase in peak dynamic pressures was measured which deviates from assumed linear response in the simplified methods. The study confirmed the reliability of numerical models in capturing water dynamic responses, demonstrating their broad applicability for use in complex problems of fluid‐structure‐soil interaction.

    

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4. Evaluation of Rolling-Type Isolation Systems for Seismic Hazard Mitigation

   https://doi.org/11244/300332  

   Calhoun, Skylar Josef ( August 2018 , The University of Oklahoma Libraries)

   null (Ed.)

   Nonstructural components within mission-critical facilities such as hospitals and telecommunication facilities are vital to a community's resilience when subjected to a seismic event. Building contents like medical and computer equipment are critical for the response and recovery process following an earthquake. A solution to protecting these systems from seismic hazards is base isolation. Base isolation systems are designed to decouple an entire building structure from destructive ground motions. For other buildings not fitted with base isolation, a practical and economical solution to protect vital building contents from earthquake-induced floor motion is to isolate individual equipment using, for example, rolling-type isolation systems (RISs). RISs are a relatively new innovation for protecting equipment. These systems function as a pendulum-like mechanism to convert horizontal motion into vertical motion. An accompanying change in potential energy creates a restoring force related to the slope of the rolling surface. This study seeks to evaluate the seismic hazard mitigation performance of RISs, as well as propose and test a novel double RIS. A physics-based mathematical model was developed for a single RIS via Lagrange's equation adhering to the kinetic constraint of rolling without slipping. The mathematical model for the single RIS was used to predict the response and characteristics of these systems. A physical model was fabricated with additive manufacturing and tested against multiple earthquakes on a shake table. The system featured a single-degree-of-freedom (SDOF) structure to represent a piece of equipment. The results showed that the RIS effectively reduced accelerations felt by the SDOF compared to a fixed-base SDOF system. The single RIS experienced the most substantial accelerations from the Mendocino record, which contains low-frequency content in the range of the RIS's natural period (1-2 seconds). Earthquakes with these long-period components have the potential to cause impacts within the isolation bearing that would degrade its performance. To accommodate large displacements, a double RIS is proposed. The double RIS has twice the displacement capacity of a single RIS without increasing the size of the bearing components. The mathematical model for the single RIS was extended to the double RIS following a similar procedure. Two approaches were used to evaluate the double RIS's performance: stochastic and deterministic. The stochastic response of the double RIS under stationary white noise excitation was evaluated for relevant system parameters, namely mass ratio and tuning frequency. Both broadband and filtered (Kanai-Tajimi) white noise excitation were considered. The response variances of the double RIS were normalized by a baseline single RIS for a comparative study, from which design parameter maps were drawn. A deterministic analysis was conducted to further evaluate the double RIS in the case of nonstationary excitation. The telecommunication equipment qualification waveform, VERTEQ-II, was used for these numerical simulations. Peak transient responses were compared to the single RIS responses, and optimal design regions were determined. General design guidelines based on the stochastic and deterministic analyses are given. The results aim to provide a framework usable in the preliminary design stage of a double RIS to mitigate seismic responses. 

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5. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 

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