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1. The Direct-method Oxygen Abundance of Typical Dwarf Galaxies at Cosmic High Noon∗

   https://doi.org/10.3847/1538-4357/acb153  

   Gburek, Timothy ; Siana, Brian ; Alavi, Anahita ; Emami, Najmeh ; Richard, Johan ; Freeman, William R. ; Stark, Daniel P. ; Snapp-Kolas, Christopher ( May 2023 , The Astrophysical Journal)

   We present a Keck/MOSFIRE rest-optical composite spectrum of 16 typical gravitationally lensed star-forming dwarf galaxies at 1.7 ≲z≲ 2.6 (z_mean= 2.30), all chosen independent of emission-line strength. These galaxies have a median stellar mass of$\log {(M_{*}/M_{\odot })}_{\mathrm{med}}={8.29}_{-0.43}^{+0.51}$and a median star formation rate of${\mathrm{S}\mathrm{F}\mathrm{R}}_{\mathrm{H}\alpha }^{\mathrm{m}\mathrm{e}\mathrm{d}}={2.25}_{-1.26}^{+2.15}{M}_{\odot }{\mathrm{y}\mathrm{r}}^{-1}$. We measure the faint electron-temperature-sensitive [Oiii]λ4363 emission line at 2.5σ(4.1σ) significance when considering a bootstrapped (statistical-only) uncertainty spectrum. This yields a direct-method oxygen abundance of$12+\log {(\mathrm{O}/\mathrm{H})}_{\mathrm{direct}}={7.88}_{-0.22}^{+0.25}$(${0.15}_{-0.06}^{+0.12}{Z}_{\odot }$). We investigate the applicability at highzof locally calibrated oxygen-based strong-line metallicity relations, finding that the local reference calibrations of Bian et al. best reproduce (≲0.12 dex) our composite metallicity at fixed strong-line ratio. At fixedM_*, our composite is well represented by thez∼ 2.3 direct-method stellar mass—gas-phase metallicity relation (MZR) of Sanders et al. When comparing to predicted MZRs from the IllustrisTNG and FIRE simulations, having recalculated our stellar masses with more realistic nonparametric star formation histories$(\log {(M_{*}/M_{\odot })}_{\mathrm{med}}={8.92}_{-0.22}^{+0.31})$, we find excellent agreement with the FIRE MZR. Our composite is consistent with no metallicity evolution, at fixedM_*and SFR, of the locally defined fundamental metallicity relation. We measure the doublet ratio [Oii]λ3729/[Oii]λ3726 = 1.56 ± 0.32 (1.51 ± 0.12) and a corresponding electron density of$n_e=1_{-0}^{+215}{\mathrm{cm}}^{-3}$($n_e=1_{-0}^{+74}{\mathrm{cm}}^{-3}$) when considering the bootstrapped (statistical-only) error spectrum. This result suggests that lower-mass galaxies have lower densities than higher-mass galaxies atz∼ 2.

    

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2. Wavelength scaling of the high-intensity laser pulse compression dynamics in gas-filled capillaries

   Nagar, G. ; Shim, B. ( November 2021 , 63rd Annual Meeting of the APS Division of Plasma Physics)

   The multimodal carrier-resolved unidirectional pulse propagation equation is solved to study the wavelength-dependent (λ = 1, 2, 3 and 4 μm) spatio-temporal dynamics, particularly pulse self-compression during high-intensity laser pulse propagation in gas-filled capillaries. We find that pulse self-compression in gas-filled capillaries due to plasma is more efficient for short wavelengths in contrast to wavelength-dependent pulse self-compression in laser filamentation [1]. To explain our finding, a detailed analysis is performed by quantifying the contributions of higher-order modes and calculating the temporal delay among modes, which reveals that pulse self-compression at longer wavelengths does not occur due to larger group velocity mismatch between the fundamental and higher-order modes for longer wavelengths [2]. Our study has important implications for the various fields of high-intensity nonlinear optics in gas-filled capillaries such as supercontinuum generation and high-order harmonic generation [3]. [1] L. Bergé et al., Phys. Rev. A 88, 023816 (2013). [2] G. Nagar and B. Shim, submitted. [3] T. Popmitchev et al. Science 336, 1287 (2012). 

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3. Two-photon absorption line shapes in the transit-time limit

   https://doi.org/10.1063/5.0040868  

   Lehmann, Kevin K. ( March 2021 , The Journal of Chemical Physics)

   A weak excitation transit-time resolution limited analytic line shape is derived for a Doppler broadening-free degenerate two-photon transition from a standing wave with a TEM00 transverse profile. This approximation is appropriate when the collisional mean free path is much larger than the transverse width of the TEM00 beam. It is considerably simpler than the two-photon absorption line shape previously published, Bordé, C. R. Hebd. Seances Acad. Sci., Ser. B 282, 341–344 (1976), which was derived for more general experimental conditions. The case of a saturating field, with an intensity-dependent shift of the resonance frequency, is treated and expressed in reduced units. Numerical calculations are presented for the line shape for a range of the reduced intensity and light intensity shifts values.

    

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4. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 

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5. Infrared-active phonon modes and static dielectric constants in α -(Al x Ga 1− x ) 2 O 3 (0.18  ≤ x  ≤ 0.54) alloys

   https://doi.org/10.1063/5.0085958  

   Stokey, Megan ; Gramer, Teresa ; Korlacki, Rafał ; Knight, Sean ; Richter, Steffen ; Jinno, Riena ; Cho, Yongjin ; Xing, Huili Grace ; Jena, Debdeep ; Hilfiker, Matthew ; et al ( March 2022 , Applied Physics Letters)

   We determine the composition dependence of the transverse and longitudinal optical infrared-active phonon modes in rhombohedral α-(Al_xGa_1−x)₂O₃alloys by far-infrared and infrared generalized spectroscopic ellipsometry. Single-crystalline high quality undoped thin-films grown on m-plane oriented α-Al₂O₃substrates with x =  0.18, 0.37, and 0.54 were investigated. A single mode behavior is observed for all phonon modes, i.e., their frequencies shift gradually between the equivalent phonon modes of the isostructural binary parent compounds. We also provide physical model line shape functions for the anisotropic dielectric functions. We use the anisotropic high-frequency dielectric constants for polarizations parallel and perpendicular to the lattice c axis measured recently by Hilfiker et al. [Appl. Phys. Lett. 119, 092103 (2021)], and we determine the anisotropic static dielectric constants using the Lyddane–Sachs–Teller relation. The static dielectric constants can be approximated by linear relationships between those of α-Ga₂O₃and α-Al₂O₃. The optical phonon modes and static dielectric constants will become useful for device design and free charge carrier characterization using optical techniques.

    

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