skip to main content

Title: Doppler narrowing, Zeeman and laser beam-shape effects in Λ-type electromagnetically induced transparency on the 85 Rb D2 line in a vapor cell
Abstract We study Λ-type Electromagnetically Induced Transparency (EIT) on the Rb D2 transition in a buffer-gas-free thermal vapor cell without anti-relaxation coating. Experimental data show well-resolved features due to velocity-selective optical pumping and one EIT resonance. The Zeeman splitting of the EIT line in magnetic fields up to 12 Gauss is investigated. One Zeeman component is free of the first-order shift and its second-order shift agrees well with theory. The full width at half maximum (FWHM) of this magnetic-field-insensitive EIT resonance is reduced due to Doppler narrowing, scales linearly in Rabi frequency over the range studied, and reaches about 100 kHz at the lowest powers. These observations agree with an analytic model for a Doppler-broadened medium developed in (Javan et al 2002 Phys. Rev. A 66 013805; Lee et al 2003 Appl. Phys. B, Lasers Opt. (Germany) B 76 , 33–9; Taichenachev et al 2000 JETP Lett. 72 , 119). Numerical simulation using the Lindblad equation reveals that the transverse laser intensity distribution and two Λ-EIT systems must be included to fully account for the measured line width and line shape of the signals. Ground-state decoherence, caused by effects that include residual optical frequency fluctuations, atom-wall and trace-gas collisions, is more » discussed. « less
Award ID(s):
Publication Date:
Journal Name:
Journal of Physics Communications
Sponsoring Org:
National Science Foundation
More Like this
  1. The multimodal carrier-resolved unidirectional pulse propagation equation is solved to study the wavelength-dependent (λ = 1, 2, 3 and 4 μm) spatio-temporal dynamics, particularly pulse self-compression during high-intensity laser pulse propagation in gas-filled capillaries. We find that pulse self-compression in gas-filled capillaries due to plasma is more efficient for short wavelengths in contrast to wavelength-dependent pulse self-compression in laser filamentation [1]. To explain our finding, a detailed analysis is performed by quantifying the contributions of higher-order modes and calculating the temporal delay among modes, which reveals that pulse self-compression at longer wavelengths does not occur due to larger group velocitymore »mismatch between the fundamental and higher-order modes for longer wavelengths [2]. Our study has important implications for the various fields of high-intensity nonlinear optics in gas-filled capillaries such as supercontinuum generation and high-order harmonic generation [3]. [1] L. Bergé et al., Phys. Rev. A 88, 023816 (2013). [2] G. Nagar and B. Shim, submitted. [3] T. Popmitchev et al. Science 336, 1287 (2012).« less
  2. Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments andmore »modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less
  3. We determine the composition dependence of the transverse and longitudinal optical infrared-active phonon modes in rhombohedral α-(Al x Ga 1− x ) 2 O 3 alloys by far-infrared and infrared generalized spectroscopic ellipsometry. Single-crystalline high quality undoped thin-films grown on m-plane oriented α-Al 2 O 3 substrates with x =  0.18, 0.37, and 0.54 were investigated. A single mode behavior is observed for all phonon modes, i.e., their frequencies shift gradually between the equivalent phonon modes of the isostructural binary parent compounds. We also provide physical model line shape functions for the anisotropic dielectric functions. We use the anisotropic high-frequency dielectricmore »constants for polarizations parallel and perpendicular to the lattice c axis measured recently by Hilfiker et al. [Appl. Phys. Lett. 119, 092103 (2021)], and we determine the anisotropic static dielectric constants using the Lyddane–Sachs–Teller relation. The static dielectric constants can be approximated by linear relationships between those of α-Ga 2 O 3 and α-Al 2 O 3 . The optical phonon modes and static dielectric constants will become useful for device design and free charge carrier characterization using optical techniques.« less
  4. Abstract

    Physical systems with non-trivial topological order find direct applications in metrology (Klitzinget al1980Phys.Rev. Lett.45494–7) and promise future applications in quantum computing (Freedman 2001Found. Comput. Math.1183–204; Kitaev 2003Ann. Phys.3032–30). The quantum Hall effect derives from transverse conductance, quantized to unprecedented precision in accordance with the system’s topology (Laughlin 1981Phys. Rev.B235632–33). At magnetic fields beyond the reach of current condensed matter experiment, around104T, this conductance remains precisely quantized with values based on the topological order (Thoulesset al1982Phys. Rev. Lett.49405–8). Hitherto, quantized conductance has only been measured in extended 2D systems. Here, we experimentally studied narrow 2Dmore »ribbons, just 3 or 5 sites wide along one direction, using ultracold neutral atoms where such large magnetic fields can be engineered (Jaksch and Zoller 2003New J. Phys.556; Miyakeet al2013Phys. Rev. Lett.111185302; Aidelsburgeret al2013Phys. Rev. Lett.111185301; Celiet al2014Phys. Rev. Lett.112043001; Stuhlet al2015Science3491514; Manciniet al2015Science3491510; Anet al2017Sci. Adv.3). We microscopically imaged the transverse spatial motion underlying the quantized Hall effect. Our measurements identify the topological Chern numbers with typical uncertainty of5%, and show that although band topology is only properly defined in infinite systems, its signatures are striking even in nearly vanishingly thin systems.

    « less
  5. The “Survey of HI in Extremely Low-mass Dwarfs” (SHIELD) is a multiwavelength study of local volume low-mass galaxies drawn from the Arecibo Legacy Fast ALFA (ALFALFA) catalog. HST/Spitzer joint program GO-12658 revealed the stellar populations of the first 12 SHIELD galaxies (Cannon et al. 2011), allowing accurate distance measurements (McQuinn et al. 2014) and detailed studies of the patterns of recent star formation in each galaxy (McQuinn et al. 2015). These HST and Spitzer images are a critical interpretive benchmark for ground-based optical imaging and spectroscopy (Haurberg et al. 2015), as well as for sensitive VLA HI spectral line imagingmore »of the SHIELD galaxies (McNichols et al. 2016; Teich et al. 2016). These results have furthered our understanding of the evolution of galaxies in a mass regime that was previously only sparsely populated. With the low-redshift ALFALFA catalog now complete, the scope of the SHIELD program has been expanded to include all 82 galaxies that meet distance, line width, and HI flux criteria for being gas-rich, low-mass galaxies. In HST program 13750, images of 18 more SHIELD galaxies have again set the physical scales for supporting HI spectral line imaging with both the VLA and the WSRT (Gordon et al. 2016). Taken as a whole, the ongoing SHIELD program is one of the most comprehensive multiwavelength studies of the physical properties of low-mass galaxies outside of the Local Group.« less