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1. Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework

   https://doi.org/10.1111/nyas.14906  

   Skorupskii, Grigorii ; Chanteux, Géraldine ; Le, Khoa N. ; Stassen, Ivo ; Hendon, Christopher H. ; Dincă, Mircea ( October 2022 , Annals of the New York Academy of Sciences)

   Metal–organic frameworks (MOFs) are hybrid materials known for their nanoscale pores, which give them high surface areas but generally lead to poor electrical conductivity. Recently, MOFs with high electrical conductivity were established as promising materials for a variety of applications in energy storage and catalysis. Many recent reports investigating the fundamentals of charge transport in these materials focus on the role of the organic ligands. Less consideration, however, is given to the metal ion forming the MOF, which is almost exclusively a late first‐row transition metal. Here, we report a moderately conductive porous MOF based on trivalent gallium and 2,3,6,7,10,11‐hexahydroxytriphenylene. Gallium, a metal that has not been featured in electrically conductive MOFs so far, has a closed‐shell electronic configuration and is present in its trivalent state—in contrast to most conductive MOFs, which are formed by open‐shell, divalent transition metals. Our material, made without using any harmful solvents, displays conductivities on the level of 3 mS/cm and a surface area of 196 m²/g, comparable to transition metal analogs.

    

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2. The effect of intrinsic layer on the performance of oxide-based p-i-n heterojunctions integrating p-SnOx and n-InGaZnO

   Lee, Dong Hun ; Lee, Sunghwan ( May 2022 , Materials Research Society)

   The discovery of oxide electronics is of increasing importance today as one of the most promising new technologies and manufacturing processes for a variety of electronic and optoelectronic applications such as next-generation displays, batteries, solar cells, and photodetectors. The high potential use seen in oxide electronics is due primarily to their high carrier mobilities and their ability to be fabricated at low temperatures. However, since the majority of oxide semiconductors are n-type oxides, current applications are limited to unipolar devices, eventually developing oxide-based bipolar devices such as p-n diodes and complementary metal-oxide semiconductors. We have contributed to wide range of oxide semiconductors and their electronics and optoelectronic device applications. Particularly, we have demonstrated n-type oxide-based thin film transistors (TFT), integrating In2O3-based n-type oxide semiconductors from binary cation materials to ternary cation species including InZnO, InGaZnO (IGZO), and InAlZnO. We have suggested channel/metallization contact strategies to achieve stable TFT performance, identified vacancy-based native defect doping mechanisms, suggested interfacial buffer layers to promote charge injection capability, and established the role of third cation species on the carrier generation and carrier transport. More recently, we have reported facile manufacturing of p-type SnOx through reactive magnetron sputtering from a Sn metal target. The fabricated p-SnOx was found to be devoid of metallic phase of Sn from x-ray photoelectron spectroscopy and demonstrated stable performance in a fully oxide based p-n heterojunction together with n-InGaZnO. The oxide-based p-n junctions exhibited a high rectification ratio greater than 103 at ±3 V, a low saturation current of ~2x10-10, and a small turn-on voltage of -0.5 V. With all the previous achievements and investigations about p-type oxide semiconductors, challenges remain for implementing p-type oxide realization. For the implementation of oxide-based p-n heterojunctions, the performance needs to be further enhanced. The current on/off ration may be limited, in our device structure, due to either high reverse saturation current (or current density) or non-ideal performance. In this study, two rational strategies are suggested to introduce an “intrinsic” layer, which is expected to reduce the reverse saturation current between p-SnOx and n-IGZO and hence increase the on/off ratio. The carrier density of n-IGZO is engineered in-situ during the sputtering process, by which compositionally homogeneous IGZO with significantly reduced carrier density is formed at the interface. Then, higher carrier density IGZO is formed continuously on the lower carrier density IGZO during the sputtering process without any exposure of the sample to the air. Alternatively, heterogeneous oxides of MgO and SiO2 are integrated into between p-SnOx and n-IGZO, by which the defects on the surface can be passivated. The interfacial properties are thoroughly investigated using transmission electron microscopy and atomic force microscopy. The I-V characteristics are compared between the set of devices integrated with two types of “intrinsic” layers. The current research results are expected to contribute to the development of p-type oxides and their industrial application manufacturing process that meets current processing requirements, such as mass production in p-type oxide semiconductors. 

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3. Electrochemical performance of ionic polymer metal composite under tensile loading

   https://doi.org/10.1088/1361-665X/acecca  

   Napollion, Liya ; Kim, Kwang J. ( August 2023 , Smart Materials and Structures)

   Cracks in polymer composites can lead to premature failure, which can be disastrous for polymer-based energy storage devices. Detecting these cracks is essential to guarantee the reliability and safety of such devices. However, detecting cracks in composite polymers such as ionic polymer metal composites (IPMCs) is a challenging task, which makes it difficult to ensure their performance and safety. The overall goal of this study is to investigate the effect of cracks or damage caused by tensile loading on the mechanical properties and electrochemical characteristics of IPMC based capacitors. During tensile testing, the deformation of the IPMC strips causes changes in the ion distribution and concentration in the polymer matrix, influencing the performance of the material. The measurements were conducted utilizing electrochemical impedance spectroscopy at a room temperature (${21}^{\circ }\text{C}$) and frequency range of 10 KHz to 1 Hz. The method utilized in this study proved to be easy and quick with consistent results. The IPMC capacitor was found to increase its capacitance after major cracking in the Pt electrodes from high tensile mechanical loads. Furthermore, at lower frequency range (<100 Hz), the real (${\epsilon }^{\mathrm{\prime }}$) and imaginary (${\epsilon }^{\mathrm{\prime }\mathrm{\prime }}$) part of permittivity increase with the addition of loads. This displays that the dielectric property of the material is affected due to the increasing of the loads. It is concluded that, at frequencies above 100 Hz, the permittivity is weakly load dependent.

    

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4. Synthesis of Graphitic Mesoporous Carbon from Metal Impregnated Silica Template for Proton Exchange Membrane Fuel Cell Application

   https://doi.org/10.1002/fuce.201800034  

   Sultana, K. N. ; Worku, D. ; Hossain, M. T. Z. ; Ilias, S. ( January 2019 , Fuel Cells)

   High surface area graphitic mesoporous carbons (M‐mGMC; M=Ni, Fe, Co or Ni‐Fe) were synthesizedviacatalytic graphitization using a hard template based synthesis method. In house prepared SBA‐15 silica material was impregnated with metal precursors to obtain M/SBA‐15, template for M‐mGMC synthesis. These materials were studied using different material characterization techniques, such as nitrogen adsorption desorption (BET), X‐ray diffraction (XRD) analysis, Raman spectroscopy, X‐ray photoelectron spectroscopy (XPS), Thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC). Specific surface area ranging from 1,227.9 m²g⁻¹to 1,320.7 m²g⁻¹was observed for four M‐mGMCs. Raman spectroscopy, XPS and wide angle XRD suggested presence of graphitic structure in these materials along with disorders. Electrocatalytic performance of these materials along with conventional carbon black (Vulcan XC‐72) were evaluated in a single‐stack proton exchange membrane fuel cell (PEMFC). Pt/NiFe‐mGMC exhibited enhanced electrocatalytic activity compared to Pt/Ni‐mGMC, Pt/Fe‐mGMC and Pt/Co‐mGMC electrocatalysts. However, Pt/NiFe‐mGMC lacked adequate proton transport in membrane electrode assembly (MEA) compared to Pt/Vulcan XC‐72. This exploratory study showed that NiFe‐mGMC may find application as electrocatalyst support material in PEMFC.

    

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5. (Digital Presentation) Activating the Ion Transmission at the Cathode-Electrolyte Interface in All-Solid-State Batteries

   https://doi.org/10.1149/MA2022-012384mtgabs  

   Zhang, Yuxuan ; Kivevele, Thomas ; Song, Han Wook ; Lee, Sunghwan ( July 2022 , ECS Meeting Abstracts)

   All-solid-state batteries (ASSBs) have garnered increasing attention due to the enhanced safety, featuring nonflammable solid electrolytes as well as the potential to achieve high energy density. 1 The advancement of the ASSBs is expected to provide, arguably, the most straightforward path towards practical, high-energy, and rechargeable batteries based on metallic anodes. 1 However, the sluggish ion transmission at the cathode-electrolyte (solid/solid) interface would result in the high resistant at the contact and limit the practical implementation of these all solid-state materials in real world batteries. 2 Several methods were suggested to enhance the kinetic condition of the ion migration between the cathode and the solid electrolyte (SE). 3 A composite strategy that mixes active materials and SEs for the cathode is a general way to decrease the ion transmission barrier at the cathode-electrolyte interface. 3 The active material concentration in the cathode is reduced as much as the SE portion increases by which the energy density of the ASSB is restricted. In addition, the mixing approach generally accompanies lattice mismatches between the cathode active materials and the SE, thus providing only limited improvements, which is imputed by random contacts between the cathode active materials and the SE during the mixing process. Implementing high-pressure for the electrode and electrolyte of ASSB in the assembling process has been verified is a but effective way to boost the ion transmission ability between the cathode active materials and the SE by decreasing the grain boundary impedance. Whereas the short-circuit of the battery would be induced by the mechanical deformation of the electrolyte under high pressure. 4 Herein, we demonstrate a novel way to address the ion transmission problem at the cathode-electrolyte interface in ASSBs. Starting from the cathode configuration, the finite element method (FEM) was employed to evaluate the current concentration and the distribution of the space charge layer at the cathode-electrolyte interface. Hierarchical three-dimensional (HTD) structures are found to have a higher Li + transfer number (t Li+ ), fewer free anions, and the weaker space-charge layer at the cathode-electrolyte interface in the resulting FEM simulation. To take advantage of the HTD structure, stereolithography is adopted as a manufacturing technique and single-crystalline Ni-rich (SCN) materials are selected as the active materials. Next, the manufactured HTD cathode is sintered at 600 °C in an N 2 atmosphere for the carbonization of the resin, which induces sufficient electronic conductivity for the cathode. Then, the gel-like Li 1.4 Al 0.4 Ti 1.6 (PO 4 ) 3 (LATP) precursor is synthesized and filled into the voids of the HTD structure cathode sufficiently. And the filled HTD structure cathodes are sintered at 900 °C to achieve the crystallization of the LATP gel. Scanning transmission electron microscopy (STEM) is used to unveil the morphology of the cathode-electrolyte interface between the sintered HTD cathode and the in-situ generated electrolyte (LATP). A transient phase has been found generated at the interface and matched with both lattices of the SCN and the SE, accelerating the transmission of the Li-ions, which is further verified by density functional theory calculations. In addition, Electron Energy Loss Spectroscopy demonstrates the preserved interface between HTD cathode and SEs. Atomic force microscopy is employed to measure the potential image of the cross-sectional interface by the peak force tapping mode. The average potential of modified samples is lower than the sample that mix SCN and SEs simply in the 2D planar structure, which confirms a weakened space charge layer by the enhanced contact capability as well as the ion transmission ability. To see if the demonstrated method is universally applicable, LiNi 0.8 Co 0.1 Mn 0.1 O 2 (NCM811) is selected as the cathode active material and manufactured in the same way as the SCN. The HTD cathode based on NCM811 exhibits higher electrochemical performance compared with the reference sample based on the 2D planar mixing-type cathode. We believe such a demonstrated universal strategy provides a new guideline to engineer the cathode/electrolyte interface by revolutionizing electrode structures that can be applicable to all-solid-state batteries. Figure 1. Schematic of comparing of traditional 2D planar cathode and HTD cathode in ASSB Tikekar, M. D. , et al. , Nature Energy (2016) 1 (9), 16114 Banerjee, A. , et al. , Chem Rev (2020) 120 (14), 6878 Chen, R. , et al. , Chem Rev (2020) 120 (14), 6820 Cheng, X. , et al. , Advanced Energy Materials (2018) 8 (7) Figure 1 

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