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1. Low-Temperature 2D/2D Ohmic Contacts in WSe ₂ Field-Effect Transistors as a Platform for the 2D Metal–Insulator Transition

   https://doi.org/10.1021/acsami.0c21440  

   Stanley, Lily J.; Chuang, Hsun-Jen; Zhou, Zhixian; Koehler, Michael R.; Yan, Jiaqiang; Mandrus, David G.; Popović, Dragana (February 2021, ACS Applied Materials & Interfaces)

   null (Ed.)

   We report the fabrication of hexagonal-boron-nitride (hBN) encapsulated multi-terminal WSe_2 Hall bars with 2D/2D low-temperature Ohmic contacts as a platform for investigating the two-dimensional (2D) metal-insulator transition. We demonstrate that the WSe_2 devices exhibit Ohmic behavior down to 0.25 K and at low enough excitation voltages to avoid current-heating effects. Additionally, the high-quality hBN-encapsulated WSe_2 devices in ideal Hall-bar geometry enable us to accurately determine the carrier density. Measurements of the temperature (T) and density (n_s) dependence of the conductivity \sigma(T,n_s) demonstrate scaling behavior consistent with a metal-insulator quantum phase transition driven by electron-electron interactions, but where disorder-induced local magnetic moments are also present. Our findings pave the way for further studies of the fundamental quantum mechanical properties of 2D transition metal dichalcogenides using the same contact engineering. 

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2. Dielectric catastrophe at the Wigner-Mott transition in a moiré superlattice

   https://doi.org/10.1038/s41467-022-32037-1  

   Tang, Yanhao; Gu, Jie; Liu, Song; Watanabe, Kenji; Taniguchi, Takashi; Hone, James C.; Mak, Kin Fai; Shan, Jie (December 2022, Nature Communications)

   Abstract The bandwidth-tuned Wigner-Mott transition is an interaction-driven phase transition from a generalized Wigner crystal to a Fermi liquid. Because the transition is generally accompanied by both magnetic and charge-order instabilities, it remains unclear if a continuous Wigner-Mott transition exists. Here, we demonstrate bandwidth-tuned metal-insulator transitions at fixed fractional fillings of a MoSe 2 /WS 2 moiré superlattice. The bandwidth is controlled by an out-of-plane electric field. The dielectric response is probed optically with the 2s exciton in a remote WSe 2 sensor layer. The exciton spectral weight is negligible for the metallic state with a large negative dielectric constant. It continuously vanishes when the transition is approached from the insulating side, corresponding to a diverging dielectric constant or a ‘dielectric catastrophe’ driven by the critical charge dynamics near the transition. Our results support the scenario of continuous Wigner-Mott transitions in two-dimensional triangular lattices and stimulate future explorations of exotic quantum phases in their vicinities. 

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3. Colossal negative magnetoresistance from hopping in insulating ferromagnetic semiconductors

   https://doi.org/10.1088/1674-4926/43/11/112502  

   Liu, Xinyu; Riney, Logan; Guerra, Josue; Powers, William; Wang, Jiashu; Furdyna, Jacek K.; Assaf, Badih A. (November 2022, Journal of Semiconductors)

   Abstract Ferromagnetic semiconductor Ga 1– x Mn x As 1– y P y thin films go through a metal–insulator transition at low temperature where electrical conduction becomes driven by hopping of charge carriers. In this regime, we report a colossal negative magnetoresistance (CNMR) coexisting with a saturated magnetic moment, unlike in the traditional magnetic semiconductor Ga 1– x Mn x As. By analyzing the temperature dependence of the resistivity at fixed magnetic field, we demonstrate that the CNMR can be consistently described by the field dependence of the localization length, which relates to a field dependent mobility edge. This dependence is likely due to the random environment of Mn atoms in Ga 1– x Mn x As 1– y P y which causes a random spatial distribution of the mobility that is suppressed by an increasing magnetic field. 

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4. Anomalous Hall effect and perpendicular magnetic anisotropy in ultrathin ferrimagnetic NiCo ₂ O ₄ films

   https://doi.org/10.1063/5.0097869  

   Chen, Xuegang; Wu, Qiuchen; Zhang, Le; Hao, Yifei; Han, Myung-Geun; Zhu, Yimei; Hong, Xia (June 2022, Applied Physics Letters)

   The inverse spinel ferrimagnetic NiCo₂O₄possesses high magnetic Curie temperature T_C, high spin polarization, and strain-tunable magnetic anisotropy. Understanding the thickness scaling limit of these intriguing magnetic properties in NiCo₂O₄thin films is critical for their implementation in nanoscale spintronic applications. In this work, we report the unconventional magnetotransport properties of epitaxial (001) NiCo₂O₄films on MgAl₂O₄substrates in the ultrathin limit. Anomalous Hall effect measurements reveal strong perpendicular magnetic anisotropy for films down to 1.5 unit cell (1.2 nm), while T_Cfor 3 unit cell and thicker films remains above 300 K. The sign change in the anomalous Hall conductivity [Formula: see text] and its scaling relation with the longitudinal conductivity ([Formula: see text]) can be attributed to the competing effects between impurity scattering and band intrinsic Berry curvature, with the latter vanishing upon the thickness driven metal–insulator transition. Our study reveals the critical role of film thickness in tuning the relative strength of charge correlation, Berry phase effect, spin–orbit interaction, and impurity scattering, providing important material information for designing scalable epitaxial magnetic tunnel junctions and sensing devices using NiCo₂O₄. 

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5. Unconventional insulator-to-metal phase transition in Mn3Si2Te6

   https://doi.org/10.1038/s41467-024-52350-1  

   Gu, Yanhong; Smith, Kevin A; Saha, Amartyajyoti; De, Chandan; Won, Choong-jae; Zhang, Yang; Lin, Ling-Fang; Cheong, Sang-Wook; Haule, Kristjan; Ozerov, Mykhaylo; et al (December 2024, Nature Communications)

   The nodal-line semiconductor Mn3Si2Te6 is generating enormous excitment due to the recent discovery of a field-driven insulator-to-metal transition and associated colossal magnetoresistance as well as evidence for a new type of quantum state involving chiral orbital currents. Strikingly, these qualities persist even in the absence of traditional Jahn-Teller distortions and double-exchange mechanisms, raising questions about exactly how and why magnetoresistance occurs along with conjecture as to the likely signatures of loop currents. Here, we measured the infrared response of Mn3Si2Te6 across the magnetic ordering and field-induced insulator-to-metal transitions in order to explore colossal magnetoresistance in the absence of Jahn-Teller and double-exchange interactions. Rather than a traditional metal with screened phonons, the field-driven insulator-to-metal transition leads to a weakly metallic state with localized carriers. Our spectral data are fit by a percolation model, providing evidence for electronic inhomogeneity and phase separation. Modeling also reveals a frequency-dependent threshold field for carriers contributing to colossal magnetoresistance which we discuss in terms of polaron formation, chiral orbital currents, and short-range spin fluctuations. These findings enhance the understanding of insulator-to-metal transitions in new settings and open the door to the design of unconventional colossal magnetoresistant materials. 

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