CdO has drawn much recent interest as a high-room-temperature-mobility oxide semiconductor with exciting potential for mid-infrared photonics and plasmonics. Wide-range modulation of carrier density in CdO is of interest both for fundamental reasons (to explore transport mechanisms in single samples) and for applications (in tunable photonic devices). Here, we thus apply ion-gel-based electrolyte gating to ultrathin epitaxial CdO(001) films, using transport, x-ray diffraction, and atomic force microscopy to deduce a reversible electrostatic gate response from −4 to +2 V, followed by rapid film degradation at higher gate voltage. Further advancing the mechanistic understanding of electrolyte gating, these observations are explained in terms of low oxygen vacancy diffusivity and high acid etchability in CdO. Most importantly, the 6-V-wide reversible electrostatic gating window is shown to enable ten-fold modulation of the Hall electron density, a striking voltage-induced metal–insulator transition, and 15-fold variation of the electron mobility. Such modulations, which are limited only by unintentional doping levels in ultrathin films, are of exceptional interest for voltage-tunable devices.
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What controls electrostatic vs electrochemical response in electrolyte-gated materials? A perspective on critical materials factors
Electrolyte-gate transistors are a powerful platform for control of material properties, spanning semiconducting behavior, insulator-metal transitions, superconductivity, magnetism, optical properties, etc. When applied to magnetic materials, for example, electrolyte-gate devices are promising for magnetoionics, wherein voltage-driven ionic motion enables low-power control of magnetic order and properties. The mechanisms of electrolyte gating with ionic liquids and gels vary from predominantly electrostatic to entirely electrochemical, however, sometimes even in single material families, for reasons that remain unclear. In this Perspective, we compare literature ionic liquid and ion gel gating data on two rather different material classes—perovskite oxides and pyrite-structure sulfides—seeking to understand which material factors dictate the electrostatic vs electrochemical gate response. From these comparisons, we argue that the ambient-temperature anion vacancy diffusion coefficient ( not the vacancy formation energy) is a critical factor controlling electrostatic vs electrochemical mechanisms in electrolyte gating of these materials. We, in fact, suggest that the diffusivity of lowest-formation-energy defects may often dictate the electrostatic vs electrochemical response in electrolyte-gated inorganic materials, thereby advancing a concrete hypothesis for further exploration in a broader range of materials.
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- Award ID(s):
- 2011401
- NSF-PAR ID:
- 10323943
- Date Published:
- Journal Name:
- APL Materials
- Volume:
- 10
- Issue:
- 4
- ISSN:
- 2166-532X
- Page Range / eLocation ID:
- 040901
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1063/5.0087396
