Rajapitamahuni, Anil Kumar, Manjeshwar, Anusha Kamath, Kumar, Avinash, Datta, Animesh, Ranga, Praneeth, Thoutam, Laxman Raju, Krishnamoorthy, Sriram, Singisetti, Uttam, and Jalan, Bharat. Plasmon-phonon coupling in electrostatically gated β-Ga2O3 films with mobility exceeding 200 cm 2V-1s-1. Retrieved from https://par.nsf.gov/biblio/10323945. ACS nano . Web. doi:10.1021/acsnano.1c09535.

Rajapitamahuni, Anil Kumar, Manjeshwar, Anusha Kamath, Kumar, Avinash, Datta, Animesh, Ranga, Praneeth, Thoutam, Laxman Raju, Krishnamoorthy, Sriram, Singisetti, Uttam, & Jalan, Bharat. Plasmon-phonon coupling in electrostatically gated β-Ga2O3 films with mobility exceeding 200 cm 2V-1s-1. ACS nano, (). Retrieved from https://par.nsf.gov/biblio/10323945. https://doi.org/10.1021/acsnano.1c09535

Rajapitamahuni, Anil Kumar, Manjeshwar, Anusha Kamath, Kumar, Avinash, Datta, Animesh, Ranga, Praneeth, Thoutam, Laxman Raju, Krishnamoorthy, Sriram, Singisetti, Uttam, and Jalan, Bharat. "Plasmon-phonon coupling in electrostatically gated β-Ga2O3 films with mobility exceeding 200 cm 2V-1s-1". ACS nano (). Country unknown/Code not available. https://doi.org/10.1021/acsnano.1c09535. https://par.nsf.gov/biblio/10323945.

@article{osti_10323945,
place = {Country unknown/Code not available}, title = {Plasmon-phonon coupling in electrostatically gated β-Ga2O3 films with mobility exceeding 200 cm 2V-1s-1}, url = {https://par.nsf.gov/biblio/10323945}, DOI = {10.1021/acsnano.1c09535}, abstractNote = {}, journal = {ACS nano}, author = {Rajapitamahuni, Anil Kumar and Manjeshwar, Anusha Kamath and Kumar, Avinash and Datta, Animesh and Ranga, Praneeth and Thoutam, Laxman Raju and Krishnamoorthy, Sriram and Singisetti, Uttam and Jalan, Bharat}, }