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1. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 

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2. Effect of double quantum dot asymmetry on electron localization

   https://doi.org/10.1142/S0217984923420058  

   Filikhin, Igor ; Karoui, Abdennaceur ; Zatezalo, Tanja ; Kruchinin, Sergei P. ; Vlahovic, Branislav ( November 2023 , Modern Physics Letters B)

   In this paper, we study the localization of an electron in a binary quantum system formed by a pair of quantum dots (QDs). The traditional theoretical consideration of such systems is limited to the symmetrical case when QDs in such double quantum dot (DQD) are assumed identical in all respects. In this paper, we model the effects of breaking QD similarities in a DQD by studying two-dimensional (2D) DQDs as a double quantum well (DQW). This is done by solving the Schrödinger equation, with parameters chosen to describe an InAs/GaAs heterostructure. We calculate the energy spectrum of the electron confinement and the spectral distribution of localized/delocalized spatial states. Both symmetric and asymmetric QW shapes are considered and their effects are compared. The effects of symmetry breaking are explained within the framework of the two-level system theory. We delineate the QW weak and strong coupling cases in DQW. In particular, we show that the coherence in ideal DQW is unstable in the case of a weak QW coupling. Within the framework of the proposed approach, a charge qubit realized on a DQD is discussed and, as an example, a qubit based on an almost ideal DQD is proposed.

    

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3. Nonsequential double ionization of Ar in near-single-cycle laser pulses

   https://doi.org/10.1364/OE.398035  

   Chen, Zhangjin ; Liu, Fang ; Wen, Hua ; Morishita, Toru ; Zatsarinny, Oleg ; Bartschat, Klaus ( July 2020 , Optics Express)

   Using the improved quantitative rescattering (QRS) model, we simulate the correlated two-electron momentum distributions (CMD) for nonsequential double ionization (NSDI) of Ar by near-single-cycle laser pulses with a wavelength of 750 nm at an intensity of 2.8 × 10¹⁴W/cm². With the accurate cross sections obtained from fully quantum mechanical calculations for both electron impact excitation and electron impact ionization of Ar⁺, we unambiguously identify the contributions from recollision direct ionization (RDI) and recollision excitation with subsequent ionization (RESI). Our analysis reveals that RESI constitutes the main contribution to NSDI of Ar under the conditions considered here. The simulated results are directly compared with experimental measurements [Bergueset al.,Nat. Commun.3,813(2012)10.1038/ncomms1807] in which each NSDI event is tagged with the carrier-envelope phase (CEP). It is found that the overall pattern of both the CEP-resolved and the CEP-averaged CMDs measured in experiment are well reproduced by the QRS model, and the cross-shaped structure in the CEP-averaged CMD is attributed to the strong forward scattering of the recolliding electron as well as the depletion effect in tunneling ionization of the electron from an excited state of the parent ion.

    

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4. Nonadiabatic coupling of the dynamical structure to the superconductivity in YSr 2 Cu 2.75 Mo 0.25 O 7.54 and Sr 2 CuO 3.3

   https://doi.org/10.1073/pnas.2018336117  

   Conradson, Steven D. ; Geballe, Theodore H. ; Jin, Chang-Qing ; Cao, Li-Peng ; Gauzzi, Andrea ; Karppinen, Maarit ; Baldinozzi, Gianguido ; Li, Wen-Min ; Gilioli, Edmondo ; Jiang, Jack M. ; et al ( December 2020 , Proceedings of the National Academy of Sciences)

   null (Ed.)

   A crucial issue in cuprates is the extent and mechanism of the coupling of the lattice to the electrons and the superconductivity. Here we report Cu K edge extended X-ray absorption fine structure measurements elucidating the internal quantum tunneling polaron (iqtp) component of the dynamical structure in two heavily overdoped superconducting cuprate compounds, tetragonal YSr 2 Cu 2.75 Mo 0.25 O 7.54 with superconducting critical temperature, T c = 84 K and hole density p = 0.3 to 0.5 per planar Cu, and the tetragonal phase of Sr 2 CuO 3.3 with T c = 95 K and p = 0.6. In YSr 2 Cu 2.75 Mo 0.25 O 7.54 changes in the Cu-apical O two-site distribution reflect a sequential renormalization of the double-well potential of this site beginning at T c , with the energy difference between the two minima increasing by ∼6 meV between T c and 52 K. Sr 2 CuO 3.3 undergoes a radically larger transformation at T c , >1-Å displacements of the apical O atoms. The principal feature of the dynamical structure underlying these transformations is the strongly anharmonic oscillation of the apical O atoms in a double-well potential that results in the observation of two distinct O sites whose Cu–O distances indicate different bonding modes and valence-charge distributions. The coupling of the superconductivity to the iqtp that originates in this nonadiabatic coupling between the electrons and lattice demonstrates an important role for the dynamical structure whereby pairing occurs even in a system where displacements of the atoms that are part of the transition are sufficiently large to alter the Fermi surface. The synchronization and dynamic coherence of the iqtps resulting from the strong interactions within a crystal would be expected to influence this process. 

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5. Long-lifetime spin excitations near domain walls in 1T-TaS 2

   https://doi.org/10.1073/pnas.2121740119  

   Aishwarya, Anuva ; Raghavan, Arjun ; Howard, Sean ; Cai, Zhuozhen ; Thakur, Gohil S. ; Won, Choongjae ; Cheong, Sang-Wook ; Felser, Claudia ; Madhavan, Vidya ( May 2022 , Proceedings of the National Academy of Sciences)

   Spin chains in solid state materials are quintessential quantum systems with potential applications in spin-based logic, memory, quantum communication, and computation. A critical challenge is the experimental determination of spin lifetimes with the ultimate goal of increasing it. Local measurements by scanning tunneling microscopy (STM) have demonstrated the importance of decoupling spins from their environment, with markedly improved lifetimes in spin chains on the surfaces of band insulators. In this work we use low-temperature scanning tunneling microscopy to reveal long-lifetime excitations in a chain of spin-1/2 electrons embedded in a charge density wave Mott insulator, 1T-TaS 2 . Naturally occurring domain walls trap chains of localized spin-1/2 electrons in nearby sites, whose energies lie inside the Mott gap. Spin-polarized measurements on these sites show distinct two-level switching noise, as well as negative differential resistance in the dI/dV spectra, typically associated with spin fluctuations. The excitations show exceptionally long lifetimes of a few seconds at 300 mK. Our work suggests that layered Mott insulators in the chalcogenide family, which are amenable to exfoliation and lithography, may provide a viable platform for quantum applications. 

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