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Epitaxial Sc x Al 1− x N on GaN exhibits attractive high-K dielectric properties
Epitaxial Sc x Al 1− x N thin films of ∼100 nm thickness grown on metal polar GaN substrates are found to exhibit significantly enhanced relative dielectric permittivity (ε r ) values relative to AlN. ε r values of ∼17–21 for Sc mole fractions of 17%–25% ( x = 0.17–0.25) measured electrically by capacitance–voltage measurements indicate that Sc x Al 1− x N has the largest relative dielectric permittivity of any existing nitride material. Since epitaxial Sc x Al 1− x N layers deposited on GaN also exhibit large polarization discontinuity, the heterojunction can exploit the in situ high-K dielectric property to extend transistor operation for power electronics and high-speed microwave applications.
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Publication Date:
NSF-PAR ID:
10325442
Journal Name:
Applied Physics Letters
Volume:
120
Issue:
15
Page Range or eLocation-ID:
152901
ISSN:
0003-6951
5. Abstract We consider the problem of covering multiple submodular constraints. Given a finite ground set N , a weight function $$w: N \rightarrow \mathbb {R}_+$$ w : N → R + , r monotone submodular functions $$f_1,f_2,\ldots ,f_r$$ f 1 , f 2 , … , f r over N and requirements $$k_1,k_2,\ldots ,k_r$$ k 1 , k 2 , … , k r the goal is to find a minimum weight subset $$S \subseteq N$$ S ⊆ N such that $$f_i(S) \ge k_i$$ f i ( S ) ≥ k i for $$1 \le i \le r$$ 1 ≤more »