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   https://doi.org/10.1016/j.apcatb.2023.122436  

   Liu, Chih-Han; Porter, Stephen; Chen, Junjie; Pham, Hien; Peterson, Eric J.; Khatri, Prateek; Toops, Todd J.; Datye, Abhaya; Kyriakidou, Eleni A. (June 2023, Applied Catalysis B: Environmental)
2. Investigating wet chemical oxidation methods to form SiO2 interlayers for self-aligned Pt-HfO2-Si gate stacks

   https://doi.org/10.1116/6.0002762  

   Brummer, Amy C.; Kurup, Siddharth; Aziz, Daniel; Filler, Michael A.; Vogel, Eric M. (July 2023, Journal of Vacuum Science & Technology A)

   Self-aligned metal-oxide-semiconductor (MOS) capacitors are studied with several low-temperature, wet chemical silicon dioxide (SiO2) interlayers to understand their impact on electrical performance. Self-aligned MOS capacitors are fabricated with a bottom-up patterning technique that uses a poly(methyl methacrylate) brush and dopant-selective KOH etch combined with area-selective atomic layer deposition of hafnium dioxide (HfO2) and Pt. The wet chemical pretreatments used to form the SiO2 interlayer include hydrofluoric acid (HF) etch, 80 °C H2O, and SC-2. Capacitance-voltage measurements of these area-selective capacitors exhibit a HfO2 dielectric constant of ∼19, irrespective of pretreatment. After a forming gas anneal, the average interface state density decreased between 1.8 and 7.5 times. The minimum observed Dit is 1 × 1011 eV−1 cm−2 for the HF-last treatment. X-ray photoelectron spectroscopy shows an increase in stoichiometric SiO2 in the interfacial layer after the anneal. Additional carbon is also observed; however, comparison with capacitors fabricated in a nonselective process reveals minimal impact on performance. 

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3. Shock-ramp of SiO2 melt

   https://doi.org/10.1063/12.0020419  

   Clark, Alisha N; Lane, J_Matthew D; Davis, Jean-Paul; Sarafian, Adam R; Cochrane, Kyle R; Townsend, Joshua P; Jacobsen, Steven D (September 2023, AIP Publishing)
4. Formation and ripening of SrTiO3 nanocrystals on SiO2

   https://doi.org/10.1063/5.0273570  

   Chinna_Kannu, L_K; Marandu, M_H; Liu, R.; Hernandez, J_M; Evans, P_G (July 2025, APL Materials)

   The crystallization of complex oxide thin films on amorphous substrates presents a significant challenge because of the lack of long-range order in these substrates and the subsequent difficulty in controlling crystal growth. Nanocrystals with similar crystal structure have the potential to serve as nucleation sites for crystallization and can facilitate this integration. Isolated nanocrystals of strontium titanate (SrTiO3) can be produced on amorphous SiO2 surfaces through crystallization and ripening of initially amorphous layers of SrTiO3. The resulting SrTiO3 nanocrystals exhibit characteristic lateral radii ranging from tens to hundreds of nm and a consistent average height of 1–2 nm across this range. The area density and mean radii of the nanocrystals can be selected by adjusting the deposition and heating parameters, including the amount of deposited SrTiO3 and the heating duration. The heating-time dependence of the area density and mean radii of the nanocrystals is consistent with predictions based on Ostwald ripening kinetics. The selection of these parameters facilitates the use of SrTiO3 nanocrystals as nucleation sites to crystallize the subsequently deposited layer. 

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5. Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions

   https://doi.org/10.1116/1.4935960  

   Karbasian, Golnaz; McConnell, Michael S.; Orlov, Alexei O.; Rouvimov, Sergei; Snider, Gregory L. (January 2016, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films)