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1. OH-Si complex in hydrogenated n-type β-Ga2O3:Si

   Venzie, Andrew; Portoff, Amanda; Fares, Chaker; Stavola, Michael; Fowler, W. Beall; Ren, Fan; Pearton, Stephen (August 2021, Applied physics letters)

   Si is an n-type dopant in Ga2O3 that can be introduced intentionally or unintentionally. The results of Secondary Ion Mass Spectrometry, Hall effect, and infrared absorption experiments show that the hydrogen plasma exposure of Si-doped Ga2O3 leads to the formation of complexes containing Si and H and the passivation of n-type conductivity. The Si-H (D) complex gives rise to an O-H (D) vibrational line at 3477.6 (2577.8) cm-1 and is shown to contain a single H (or D) atom. The direction of the transition moment of this defect has been investigated to provide structure-sensitive information. Theory suggests possible structures for an OH-Si complex that are consistent with its observed vibrational properties. 

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2. Nanomeshed Si nanomembranes

   https://doi.org/10.1038/s41528-019-0053-5  

   Han, Xun; Seo, Kyung Jin; Qiang, Yi; Li, Zeping; Vinnikova, Sandra; Zhong, Yiding; Zhao, Xuanyi; Hao, Peijie; Wang, Shuodao; Fang, Hui (December 2019, npj Flexible Electronics)
3. Virtual melting and cyclic transformations between amorphous Si, Si I, and Si IV in a shear band at room temperature

   https://doi.org/10.1038/s41524-025-01537-1  

   Chen, Hao; Levitas, Valery I (December 2025, npj Computational Materials)

   Virtual melting (VM) as alternative deformation and stress relaxation mechanisms under extreme load is directly validated by molecular dynamics (MD) simulations of the simple shear of single crystal Si I at a temperature 1383K below the melting temperature. The shear band consisting of liquid Si is formed immediately after the shear instability while stresses drop to zero. This process is independent of the applied shear rate. A new thermodynamic approach is developed, and the thermodynamic criterion for VM, which depends on the ratio of the sample to shear band widths, is derived analytically and confirmed by MD simulations. Since stress-free melt is unstable at 300K, with further shear, the VM immediately transforms to a mixture of low-density amorphous a-Si, stable Si I, and metastable Si IV. Cyclic transformations between a-Si ↔ Si I, a-Si ↔ Si IV, and Si I ↔ Si IV with volume fraction of all phases mostly between 0.2 and 0.4 and non-repeatable nanostructure evolution are reveled. Such cyclic transformations produce additional important carriers for plastic deformation through transformation strain and transformation-induced plasticity due to volume change, which may occur in shear bands in various material systems but missed in experiments and simulations. The release of shear stresses quenches the microstructure, and shows reasonable qualitative correspondence with existing experiments. 

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4. Exploring Multiple Pathways to Low TDD GaP/Si for III-V/Si Photovoltaics

   https://doi.org/10.1109/PVSC43889.2021.9518431  

   Boyer, Jacob T.; Blumer, Zak H.; Lepkowski, Daniel L.; Ringel, Steven A.; Grassman, Tyler J. (June 2021, 48th IEEE Photovoltaic Specialists Conference)
5. Electrical Characterization of Si Microwires and of Si Microwire/Conducting Polymer Composite Junctions

   https://doi.org/10.1021/jz2001375  

   Yahyaie, Iman; McEleney, Kevin; Walter, Michael; Oliver, Derek R.; Thomson, Douglas J.; Freund, Michael S.; Lewis, Nathan S. (March 2011, The Journal of Physical Chemistry Letters)