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Title: Recombination Rates of In x Ga 1−x N/Al y Ga 1−y N/GaN Multiple Quantum Wells Emitting From 640 to 565 nm
Award ID(s):
2204317
PAR ID:
10330257
Author(s) / Creator(s):
; ; ; ; ; ;
Date Published:
Journal Name:
IEEE Journal of Quantum Electronics
Volume:
57
Issue:
6
ISSN:
0018-9197
Page Range / eLocation ID:
1 to 7
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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