Abstract Search for novel electronically ordered states of matter emerging near quantum phase transitions is an intriguing frontier of condensed matter physics. In ruthenates, the interplay between Coulomb correlations among the 4delectronic states and their spin-orbit interactions, lead to complex forms of electronic phenomena. Here we investigate the double layered Sr3(Ru1−xMnx)2O7and its doping-induced quantum phase transition from a metal to an antiferromagnetic Mott insulator. Using spectroscopic imaging with the scanning tunneling microscope, we visualize the evolution of the electronic states in real- and momentum-space. We find a partial-gap at the Fermi energy that develops with doping to form a weak Mott insulating state. Near the quantum phase transition, we discover a spatial electronic reorganization into a commensurate checkerboard charge order. These findings bear a resemblance to the universal charge order in the pseudogap phase of cuprates and demonstrate the ubiquity of charge order that emanates from doped Mott insulators.
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Long-lifetime spin excitations near domain walls in 1T-TaS 2
Spin chains in solid state materials are quintessential quantum systems with potential applications in spin-based logic, memory, quantum communication, and computation. A critical challenge is the experimental determination of spin lifetimes with the ultimate goal of increasing it. Local measurements by scanning tunneling microscopy (STM) have demonstrated the importance of decoupling spins from their environment, with markedly improved lifetimes in spin chains on the surfaces of band insulators. In this work we use low-temperature scanning tunneling microscopy to reveal long-lifetime excitations in a chain of spin-1/2 electrons embedded in a charge density wave Mott insulator, 1T-TaS 2 . Naturally occurring domain walls trap chains of localized spin-1/2 electrons in nearby sites, whose energies lie inside the Mott gap. Spin-polarized measurements on these sites show distinct two-level switching noise, as well as negative differential resistance in the dI/dV spectra, typically associated with spin fluctuations. The excitations show exceptionally long lifetimes of a few seconds at 300 mK. Our work suggests that layered Mott insulators in the chalcogenide family, which are amenable to exfoliation and lithography, may provide a viable platform for quantum applications.
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- Award ID(s):
- 2003784
- PAR ID:
- 10332120
- Date Published:
- Journal Name:
- Proceedings of the National Academy of Sciences
- Volume:
- 119
- Issue:
- 22
- ISSN:
- 0027-8424
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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