Abstract The interfacial modification effect of the molybdenum trioxide (MoO 3 ) buffer layer inserted between Al and black phosphorus (BP) was investigated with photoemission spectroscopy. The results show that MoO 3 buffer layer can effectively prevent the destruction of the outermost BP lattice by Al thermal deposition and change the interface electronic structure between Al and BP. At the MoO 3 /BP interface, there is an interface dipole pointing from MoO 3 to BP. During the metal deposition process, an interfacial chemical reaction between Al and MoO 3 was found. These observations would provide insight for fabricating high-performance BP-based devices.
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Surface transfer doping of MoO 3 on hydrogen terminated diamond with an Al 2 O 3 interfacial layer
A thin layer of Al 2 O 3 was employed as an interfacial layer between surface conductive hydrogen-terminated (H-terminated) diamond and MoO 3 to increase the distance between the hole accumulation layer in diamond and negatively charged states in the acceptor layer and, thus, reduce the Coulomb scattering and increase the hole mobility. The valence band offsets are found to be 2.7 and 3.1 eV for Al 2 O 3 /H-terminated diamond and MoO 3 /H-terminated diamond, respectively. Compared to the MoO 3 /H-terminated diamond structure, a higher hole mobility was achieved with Al 2 O 3 inserted as an interface layer. This work provides a strategy to achieve increased hole mobility of surface conductive diamond by using optimal interlayer along with high high electron affinity surface acceptor materials.
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- PAR ID:
- 10337572
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 120
- Issue:
- 19
- ISSN:
- 0003-6951
- Page Range / eLocation ID:
- 191602
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract Ultrathin (sub-2 nm) Al2O3/MgO memristors were recently developed using an
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1063/5.0083971
