In this work, the structural and electrical properties of metalorganic chemical vapor deposited Si-doped β-(Al x Ga 1−x ) 2 O 3 thin films grown on (010) β-Ga 2 O 3 substrates are investigated as a function of Al composition. The room temperature Hall mobility of 101 cm 2 /V s and low temperature peak mobility (T = 65 K) of 1157 cm 2 /V s at carrier concentrations of 6.56 × 10 17 and 2.30 × 10 17 cm −3 are measured from 6% Al composition samples, respectively. The quantitative secondary ion mass spectroscopy (SIMS) characterization reveals a strong dependence of Si and other unintentional impurities, such as C, H, and Cl concentrations in β-(Al x Ga 1−x ) 2 O 3 thin films, with different Al compositions. Higher Al compositions in β-(Al x Ga 1−x ) 2 O 3 result in lower net carrier concentrations due to the reduction of Si incorporation efficiency and the increase of C and H impurity levels that act as compensating acceptors in β-(Al x Ga 1−x ) 2 O 3 films. Lowering the growth chamber pressure reduces Si concentrations in β-(Al x Ga 1−x ) 2 O 3 films due to the increase of Al compositions as evidenced by comprehensive SIMS and Hall characterizations. Due to the increase of lattice mismatch between the epifilm and substrate, higher Al compositions lead to cracking in β-(Al x Ga 1−x ) 2 O 3 films grown on β-Ga 2 O 3 substrates. The (100) cleavage plane is identified as a major cracking plane limiting the growth of high-quality Si-doped (010) β-(Al x Ga 1−x ) 2 O 3 films beyond the critical thicknesses, which leads to highly anisotropic and inhomogeneous behaviors in terms of conductivity.
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Surface transfer doping of MoO 3 on hydrogen terminated diamond with an Al 2 O 3 interfacial layer
A thin layer of Al 2 O 3 was employed as an interfacial layer between surface conductive hydrogen-terminated (H-terminated) diamond and MoO 3 to increase the distance between the hole accumulation layer in diamond and negatively charged states in the acceptor layer and, thus, reduce the Coulomb scattering and increase the hole mobility. The valence band offsets are found to be 2.7 and 3.1 eV for Al 2 O 3 /H-terminated diamond and MoO 3 /H-terminated diamond, respectively. Compared to the MoO 3 /H-terminated diamond structure, a higher hole mobility was achieved with Al 2 O 3 inserted as an interface layer. This work provides a strategy to achieve increased hole mobility of surface conductive diamond by using optimal interlayer along with high high electron affinity surface acceptor materials.
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- NSF-PAR ID:
- 10337572
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 120
- Issue:
- 19
- ISSN:
- 0003-6951
- Page Range / eLocation ID:
- 191602
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1063/5.0083971
