skip to main content

This content will become publicly available on May 1, 2023

Title: Communication Trade Offs in Intermediate Qudit Circuits
Quantum computing promises speedup of classical algorithms in the long term. Current hardware is unable to support this goal and programs must be efficiently compiled to use of the devices through reduction of qubits used, gate count and circuit duration. Many quantum systems have access to higher levels, expanding the computational space for a device. We develop higher level qudit communication circuits, compilation pipelines, and circuits that take advantage of this extra space by temporarily pushing qudits into these higher levels. We show how these methods are able to more efficiently use the device, and where they see diminishing returns.
; ;
Award ID(s):
Publication Date:
Journal Name:
2022 IEEE 52nd International Symposium on Multiple-Valued Logic (ISMVL)
Page Range or eLocation-ID:
43 to 49
Sponsoring Org:
National Science Foundation
More Like this
  1. Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K.more »The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less
  2. The emergence of Intel's Optane DC persistent memory (Optane Pmem) draws much interest in building persistent key-value (KV) stores to take advantage of its high throughput and low latency. A major challenge in the efforts stems from the fact that Optane Pmem is essentially a hybrid storage device with two distinct properties. On one hand, it is a high-speed byte-addressable device similar to DRAM. On the other hand, the write to the Optane media is conducted at the unit of 256 bytes, much like a block storage device. Existing KV store designs for persistent memory do not take into account of the latter property, leading to high write amplification and constraining both write and read throughput. In the meantime, a direct re-use of a KV store design intended for block devices, such as LSM-based ones, would cause much higher read latency due to the former property. In this paper, we propose ChameleonDB, a KV store design specifically for this important hybrid memory/storage device by considering and exploiting these two properties in one design. It uses LSM tree structure to efficiently admit writes with low write amplification. It uses an in-DRAM hash table to bypass LSM-tree's multiple levels for fast reads.more »In the meantime, ChameleonDB may choose to opportunistically maintain the LSM multi-level structure in the background to achieve short recovery time after a system crash. ChameleonDB's hybrid structure is designed to be able to absorb sudden bursts of a write workload, which helps avoid long-tail read latency. Our experiment results show that ChameleonDB improves write throughput by 3.3× and reduces read latency by around 60% compared with a legacy LSM-tree based KV store design. ChameleonDB provides performance competitive even with KV stores using fully in-DRAM index by using much less DRAM space. Compared with CCEH, a persistent hash table design, ChameleonDB provides 6.4× higher write throughput.« less
  3. Variational Quantum Algorithms (VQAs) rely upon the iterative optimization of a parameterized unitary circuit with respect to an objective function. Since quantum machines are noisy and expensive resources, it is imperative to choose a VQA's ansatz appropriately and its initial parameters to be close to optimal. This work tackles the problem of finding initial ansatz parameters by proposing CAFQA, a Clifford ansatz for quantum accuracy. The CAFQA ansatz is a hardware-efficient circuit built with only Clifford gates. In this ansatz, the initial parameters for the tunable gates are chosen by searching efficiently through the Clifford parameter space via classical simulation, thereby producing a suitable stabilizer state. The stabilizer states produced are shown to always equal or outperform traditional classical initialization (e.g., Hartree-Fock), and often produce high accuracy estimations prior to quantum exploration. Furthermore, the technique is classically suited since a) Clifford circuits can be exactly simulated classically in polynomial time and b) the discrete Clifford space, while scaling exponentially in the number of qubits, is searched efficiently via Bayesian Optimization. For the Variational Quantum Eigensolver (VQE) task of molecular ground state energy estimation up to 20 qubits, CAFQA's Clifford Ansatz achieves a mean accuracy of near 99%, recovering as muchmore »as 99.99% of the correlation energy over Hartree-Fock. Notably, the scalability of the approach allows for preliminary ground state energy estimation of the challenging Chromium dimer with an accuracy greater than Hartree-Fock. With CAFQA's initialization, VQA convergence is accelerated by a factor of 2.5x. In all, this work shows that stabilizer states are an accurate ansatz initialization for VQAs. Furthermore, it highlights the potential for quantum-inspired classical techniques to support VQAs.« less
  4. A basic question in the theory of fault-tolerant quantum computation is to understand the fundamental resource costs for performing a universal logical set of gates on encoded qubits to arbitrary accuracy. Here we consider qubits encoded with constant space overhead (i.e. finite encoding rate) in the limit of arbitrarily large code distance d through the use of topological codes associated to triangulations of hyperbolic surfaces. We introduce explicit protocols to demonstrate how Dehn twists of the hyperbolic surface can be implemented on the code through constant depth unitary circuits, without increasing the space overhead. The circuit for a given Dehn twist consists of a permutation of physical qubits, followed by a constant depth local unitary circuit, where locality here is defined with respect to a hyperbolic metric that defines the code. Applying our results to the hyperbolic Fibonacci Turaev-Viro code implies the possibility of applying universal logical gate sets on encoded qubits through constant depth unitary circuits and with constant space overhead. Our circuits are inherently protected from errors as they map local operators to local operators while changing the size of their support by at most a constant factor; in the presence of noisy syndrome measurements, our results suggestmore »the possibility of universal fault tolerant quantum computation with constant space overhead and time overhead of O ( d / log ⁡ d ) . For quantum circuits that allow parallel gate operations, this yields the optimal scaling of space-time overhead known to date.« less
  5. Abstract A superconducting diode is an electronic device that conducts supercurrent and exhibits zero resistance primarily for one direction of applied current. Such a dissipationless diode is a desirable unit for constructing electronic circuits with ultralow power consumption. However, realizing a superconducting diode is fundamentally and technologically challenging, as it usually requires a material structure without a centre of inversion, which is scarce among superconducting materials. Here, we demonstrate a superconducting diode achieved in a conventional superconducting film patterned with a conformal array of nanoscale holes, which breaks the spatial inversion symmetry. We showcase the superconducting diode effect through switchable and reversible rectification signals, which can be three orders of magnitude larger than that from a flux-quantum diode. The introduction of conformal potential landscapes for creating a superconducting diode is thereby proven as a convenient, tunable, yet vastly advantageous tool for superconducting electronics. This could be readily applicable to any superconducting materials, including cuprates and iron-based superconductors that have higher transition temperatures and are desirable in device applications.