The discovery of oxide electronics is of increasing importance today as one of the most promising new technologies and manufacturing processes for a variety of electronic and optoelectronic applications such as nextgeneration displays, batteries, solar cells, memory devices, and photodetectors[1]. The high potential use seen in oxide electronics is due primarily to their high carrier mobilities and their ability to be fabricated at low temperatures[2]. However, since the majority of oxide semiconductors are ntype oxides, current applications are limited to unipolar devices, eventually developing oxidebased bipolar devices such as pn diodes and complementary metaloxide semiconductors. We have contributed to a wide range of oxide semiconductors and their electronics and optoelectronic device applications. Particularly, we have demonstrated ntype oxidebased thin film transistors (TFT), integrating In 2 O 3 based ntype oxide semiconductors from binary cation materials to ternary cation species including InZnO, InGaZnO (IGZO), and InAlZnO. We have suggested channel/metallization contact strategies to achieve stable and high TFT performance[3, 4], identified vacancybased native defect doping mechanisms[5], suggested interfacial buffer layers to promote charge injection capability[6], and established the role of third cation species on the carrier generation and carrier transport[7]. More recently, we have reported facile manufacturing of ptype SnOx throughmore »
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Embedding properties of network realizations of dissipative reduced order models
Embedding properties of network realizations of dissipative reduced order models
Jörn Zimmerling, Mikhail Zaslavsky,Rob Remis, Shasri Moskow, Alexander Mamonov, Murthy Guddati,
Vladimir Druskin, and Liliana Borcea
Mathematical Sciences Department, Worcester Polytechnic Institute
https://www.wpi.edu/people/vdruskin
Abstract
Realizations of reduced order models of passive SISO or MIMO LTI problems can be transformed to tridiagonal and
blocktridiagonal forms, respectively, via dierent modications of the Lanczos algorithm. Generally, such realizations
can be interpreted as ladder resistorcapacitorinductor (RCL) networks. They gave rise to network syntheses in the
rst half of the 20th century that was at the base of modern electronics design and consecutively to MOR that
tremendously impacted many areas of engineering (electrical, mechanical, aerospace, etc.) by enabling ecient
compression of the underlining dynamical systems. In his seminal 1950s works Krein realized that in addition to
their compressing properties, network realizations can be used to embed the data back into the state space of the
underlying continuum problems.
In more recent works of the authors Krein's ideas gave rise to socalled nitedierence Gaussian quadrature rules
(FDGQR), allowing to approximately map the ROM statespace representation to its full order continuum counterpart
on a judicially chosen grid. Thus, the state variables can be accessed directly from the transfer function without
solving the full problem and even explicit knowledge of the PDE coecients in the more »
 Award ID(s):
 2110773
 Publication Date:
 NSFPAR ID:
 10340868
 Journal Name:
 HOUSEHOLDER SYMPOSIUM XXI
 Sponsoring Org:
 National Science Foundation
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