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Area‐selective atomic layer deposition (AS‐ALD) techniques are an emerging class of bottom‐up nanofabrication techniques that selectively deposit patterned ALD films without the need for conventional top‐down lithography. To achieve this patterning, most reported AS‐ALD techniques use a chemical inhibitor layer to proactively block ALD surface reactions in selected areas. Herein, an AS‐ALD process is demonstrated that uses a focused electron beam (e‐beam) to dissociate ambient water vapor and “write” highly resolved hydroxylated patterns on the surface of highly oriented pyrolytic graphite (HOPG). The patterned hydroxylated regions then support subsequent ALD deposition. The e‐beam functionalization technique facilitates precise pattern placement through control of beam position, dwell time, and current. Spatial resolution of the technique exceeded 42 nm, with a surface selectivity of between 69.9% and 99.7%, depending on selection of background nucleation regions. This work provides a fabrication route for AS‐ALD on graphitic substrates suitable for fabrication of graphene‐based nanoelectronics.
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Bottom-up nanoscale patterning and selective deposition on silicon nanowires
Abstract We demonstrate a bottom-up process for programming the deposition of coaxial thin films aligned to the underlying dopant profile of semiconductor nanowires. Our process synergistically combines three distinct methods—vapor–liquid–solid nanowire growth, selective coaxial lithography via etching of surfaces (SCALES), and area-selective atomic layer deposition (AS-ALD)—into a cohesive whole. Here, we study ZrO 2 on Si nanowires as a model system. Si nanowires are first grown with an axially modulated n-Si/i-Si dopant profile. SCALES then yields coaxial poly(methyl methacrylate) (PMMA) masks on the n-Si regions. Subsequent AS-ALD of ZrO 2 occurs on the exposed i-Si regions and not on those masked by PMMA. We show the spatial relationship between nanowire dopant profile, PMMA masks, and ZrO 2 films, confirming the programmability of the process. The nanoscale resolution of our process coupled with the plethora of available AS-ALD chemistries promises a range of future opportunities to generate structurally complex nanoscale materials and electronic devices using entirely bottom-up methods.
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- Award ID(s):
- 1916953
- PAR ID:
- 10341680
- Date Published:
- Journal Name:
- Nanotechnology
- Volume:
- 33
- Issue:
- 10
- ISSN:
- 0957-4484
- Page Range / eLocation ID:
- 105604
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1088/1361-6528/ac3bed
