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1. Hiding DRAM Refresh Overhead in Real-Time Cyclic Executives

   Pan, Xing ; Mueller, Frank ( December 2019 , Real-Time Systems Symposium (RTSS))

   eal-time systems with hard timing constrains require known upper bounds on each task’s worst-case execution time (WCET) to determine if all deadlines can be met. One challenge in predictable execution is that Dynamic Random Access Memory (DRAM) cells must be refreshed periodically to maintain data validity, yet memory remains blocked during refresh, which results in overly pessimistic WCET bounds. This work contributes “Colored Refresh” to hide DRAM refresh overhead while preserving real-time schedulability for cyclic executives, which are widely used in highly critical systems. Colored Refresh partitions DRAM memory at rank granularity such that refreshes rotate round-robin from rank to rank. Real-time tasks are assigned different ranks via colored memory allocation. By cooperatively scheduling real-time tasks and refresh operations, memory requests no longer suffer from refresh interference. This reduces memory access latencies for tasks irrespective of DRAM density and size. Hence, Colored Refresh reduces a task’s WCET and makes its execution more predictable. 

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2. The Colored Refresh Server for DRAM

   https://doi.org/10.1109/ISORC.2019.00015  

   Pan, Xing ; Mueller, Frank ( May 2019 , IEEE International Symposium on Real-Time Computing (ISORC))

   Bounding each task’s worst-case execution time (WCET) accurately is essential for real-time systems to determine if all deadlines can be met. Yet, access latencies to Dynamic Random Access Memory (DRAM) vary significantly due to DRAM refresh, which blocks access to memory cells. Variations further increase as DRAM density grows. This work contributes the “Colored Refresh Server” (CRS), a uniprocessor scheduling paradigm that partitions DRAM in two distinctly colored groups such that refreshes of one color occur in parallel to the execution of real-time tasks of the other color. By executing tasks in phase with periodic DRAM refreshes with opposing colors, memory requests no longer suffer from refresh interference. Experimental results confirm that refresh overhead 

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3. Disperse Access Considered Energy Inefficiency in Intel Optane DC Persistent Memory Servers

   https://doi.org/10.1109/ICDCS47774.2020.00107  

   Li, Daping ; Wan, Jiguang ; Wang, Jun ; Zhou, Jian ; Lu, Kai ; Xu, Peng ; Wu, Fei ; Xie, Changsheng ( November 2020 , 2020 IEEE 40th International Conference on Distributed Computing Systems (ICDCS))

   null (Ed.)

   The Intel Optane DC Persistent Memory Module (AEP), which is the first commercial available Non-Volatile Memory (NVM) product, offers comparable performance with DRAM while providing larger capacities and data persistence. Existing researches that substitute NVM with DRAM or hybridize them are either emulator-based or focused on how to improve the energy efficiency for writes. Unfortunately, the energy efficiency of the real AEP system is less explored. Based on real AEP, we observe that even though eliminating the DRAM-like refresh energy consumptions, AEP consumes significant different energy at different performance levels. Specifically, requests with time intervals (dispersed) underperform in both performance and energy efficiency when compared with the case of requests without time intervals (compact). This disparity and parallelism exploitation potentials motivate us to propose Sprint-AEP, an energy-efficiency-oriented scheduling method for AEP-equipped servers. Sprint-AEP fully activates adequate AEPs to serve most of the requests by deferring the write requests and prefetching the hottest data. The remaining AEPs will stay in idle mode with a low idle power to save energy. Besides, we also utilize the read parallelism to accelerate the sync and prefetching processes. Compared with energy-unaware AEP usages, our experimental results show that Sprint-AEP saves up to 26% energy with little performance degradation. 

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4. Max-PIM: Fast and Efficient Max/Min Searching in DRAM

   https://doi.org/10.1109/DAC18074.2021.9586096  

   Zhang, Fan ; Angizi, Shaahin ; Fan, Deliang ( December 2021 , 2021 58th ACM/IEEE Design Automation Conference (DAC))

   Recently, in-DRAM computing is becoming one promising technique to address the notorious ‘memory-wall’ issue for big data processing. In this work, for the first time, we propose a novel ‘Min/Max-in-memory’ algorithm based on iterative XNOR bit-wise comparison, which supports parallel inmemory searching for minimum and maximum of bulk data stored in DRAM as unsigned & signed integers, fixed-point and floating numbers. We then develop a new processing-in-DRAM architecture, called Max-PIM, that supports complete bit-wise Boolean logic and beyond. Differentiating from prior works, Max-PIM is optimized with one-cycle fast XNOR logicin-DRAM operation and in-memory data transpose, which are heavily used and keys to accelerate the proposed Min/Max-in-memory algorithm efficiently. Extensive experiments of utilizing Max-PIM in big data sorting and graph processing applications show that it could speed up ~ 50X and ~ 1000X than GPU and CPU, while only consuming 10% and 1% energy, respectively. Moreover, comparing with recent representative In-DRAM computing platforms, i.e., Ambit [1], DRISA [2], our design could speed up ~ 3X - 10X. 

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5. Mitigating Voltage Drop in Resistive Memories by Dynamic RESET Voltage Regulation and Partition RESET

   https://doi.org/10.1109/HPCA47549.2020.00031  

   Zokaee, Farzaneh ; Jiang, Lei ( February 2020 , IEEE International Symposium on High Performance Computer Architecture)

   The emerging resistive random access memory (ReRAM) technology has been deemed as one of the most promising alternatives to DRAM in main memories, due to its better scalability, zero cell leakage and short read latency. The cross-point (CP) array enables ReRAM to obtain the theoretical minimum 4F^2 cell size by placing a cell at the cross-point of a word-line and a bit-line. However, ReRAM CP arrays suffer from large sneak current resulting in significant voltage drop that greatly prolongs the array RESET latency. Although prior works reduce the voltage drop in CP arrays, they either substantially increase the array peripheral overhead or cannot work well with wear leveling schemes. In this paper, we propose two array micro-architecture level techniques, dynamic RESET voltage regulation (DRVR) and partition RESET (PR), to mitigate voltage drop on both bit-lines and word-lines in ReRAM CP arrays. DRVR dynamically provides higher RESET voltage to the cells far from the write driver and thus encountering larger voltage drop on a bit-line, so that all cells on a bit-line share approximately the same latency during RESETs. PR decides how many and which cells to reset online to partition the CP array into multiple equivalent circuits with smaller word-line resistance and voltage drop. Because DRVR and PR greatly reduce the array RESET latency, the ReRAM-based main memory lifetime under the worst case non-stop write traffic significantly decreases. To increase the CP array endurance, we further upgrade DRVR by providing lower RESET voltage to the cells suffering from less voltage drop on a word-line. Our experimental results show that, compared to the combination of prior voltage drop reduction techniques, our DRVR and PR improve the system performance by 11.7% and decrease the energy consumption by 46% averagely, while still maintaining >10-year main memory system lifetime. 

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