- PAR ID:
- 10347280
- Date Published:
- Journal Name:
- Scientific Reports
- Volume:
- 12
- Issue:
- 1
- ISSN:
- 2045-2322
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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null (Ed.)Abstract The resistance to oxidizing environments exhibited by some M n+1 AX n (MAX) phases stems from the formation of stable and protective oxide layers at high operating temperatures. The MAX phases are hexagonally arranged layered nitrides or carbides with general formula M n +1 AX n , n = 1, 2, 3, where M is early transition elements, A is A block elements, and X is C/N. Previous attempts to model and assess oxide phase stability in these systems has been limited in scope due to higher computational costs. To address the issue, we developed a machine-learning driven high-throughput framework for the fast assessment of phase stability and oxygen reactivity of 211 chemistry MAX phase M 2 AX. The proposed scheme combines a sure independence screening sparsifying operator-based machine-learning model in combination with grand-canonical linear programming to assess temperature-dependent Gibbs free energies, reaction products, and elemental chemical activity during the oxidation of MAX phases. The thermodynamic stability, and chemical activity of constituent elements of Ti 2 AlC with respect to oxygen were fully assessed to understand the high-temperature oxidation behavior. The predictions are in good agreement with oxidation experiments performed on Ti 2 AlC. We were also able to explain the metastability of Ti 2 SiC, which could not be synthesized experimentally due to higher stability of competing phases. For generality of the proposed approach, we discuss the oxidation mechanism of Cr 2 AlC. The insights of oxidation behavior will enable more efficient design and accelerated discovery of MAX phases with maintained performance in oxidizing environments at high temperatures.more » « less
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null (Ed.)Quaternary MAX phases, (Ta 1−x Ti x ) 3 AlC 2 ( x = 0.4, 0.62, 0.75, 0.91 or 0.95), have been synthesised via pressureless sintering of TaC, TiC, Ti and Al powders. Via chemical etching of the Al layers, (Ta 0.38 Ti 0.62 ) 3 C 2 T z – a new MXene, has also been synthesised. All materials contain an M-layer solid solution of Ta and Ti, with a variable Ta concentration, paving the way for the synthesis of a range of alloyed (Ta,Ti) 3 C 2 T z MXenes with tuneable compositions for a wide range of potential applications.more » « less
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Abstract MAX phases, ternary transition metal carbides and nitrides, represent one of the largest families of layered materials. They also serve as precursors to MXenes, two‐dimensional (2D) carbides and nitrides. The possibility of oxygen substitution in the carbon sublattice, forming oxycarbide MAX phases and MXenes, was recently reported using secondary ion mass spectrometry. However, while the effect of oxygen substitution on the properties of MXenes was investigated, little is known about its effect on the properties of MAX phases. Here, we explore the influence of process parameters (e.g., particle size, synthesis temperature, annealing time, etc.) and oxygen presence in the lattice on the oxidation resistance of Ti3AlC2MAX phase powders. We show that X‐ray diffraction measurements can identify oxygen substitution and assist in selecting MAX precursors to synthesize stable and highly conductive MXenes. Eliminating the substitutional oxygen from the MAX phase lattice increases the onset of oxidation by 400°C, from approximately 490 to 890°C. Finally, we discuss the impact of oxygen substitution in the MAX phases on the synthesis of MXenes and their resulting properties.
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In this work, the structural and electrical properties of metalorganic chemical vapor deposited Si-doped β-(Al x Ga 1−x ) 2 O 3 thin films grown on (010) β-Ga 2 O 3 substrates are investigated as a function of Al composition. The room temperature Hall mobility of 101 cm 2 /V s and low temperature peak mobility (T = 65 K) of 1157 cm 2 /V s at carrier concentrations of 6.56 × 10 17 and 2.30 × 10 17 cm −3 are measured from 6% Al composition samples, respectively. The quantitative secondary ion mass spectroscopy (SIMS) characterization reveals a strong dependence of Si and other unintentional impurities, such as C, H, and Cl concentrations in β-(Al x Ga 1−x ) 2 O 3 thin films, with different Al compositions. Higher Al compositions in β-(Al x Ga 1−x ) 2 O 3 result in lower net carrier concentrations due to the reduction of Si incorporation efficiency and the increase of C and H impurity levels that act as compensating acceptors in β-(Al x Ga 1−x ) 2 O 3 films. Lowering the growth chamber pressure reduces Si concentrations in β-(Al x Ga 1−x ) 2 O 3 films due to the increase of Al compositions as evidenced by comprehensive SIMS and Hall characterizations. Due to the increase of lattice mismatch between the epifilm and substrate, higher Al compositions lead to cracking in β-(Al x Ga 1−x ) 2 O 3 films grown on β-Ga 2 O 3 substrates. The (100) cleavage plane is identified as a major cracking plane limiting the growth of high-quality Si-doped (010) β-(Al x Ga 1−x ) 2 O 3 films beyond the critical thicknesses, which leads to highly anisotropic and inhomogeneous behaviors in terms of conductivity.more » « less
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Material properties of Ga–Sb binary alloy thin films deposited under ultra-high vacuum conditions were studied for analog phase change memory (PCM) applications. Crystallization of this alloy was shown to occur in the temperature range of 180–264 °C, with activation energy >2.5 eV depending on the composition. X-ray diffraction (XRD) studies showed phase separation upon crystallization into two phases, Ga-doped A7 antimony and cubic zinc-blende GaSb. Synchrotron in situ XRD analysis revealed that crystallization into the A7 phase is accompanied by Ga out-diffusion from the grains. X-ray absorption fine structure studies of the local structure of these alloys demonstrated a bond length decrease with a stable coordination number of 4 upon amorphous-to-crystalline phase transformation. Mushroom cell structures built with Ga–Sb alloys on ø110 nm TiN heater show a phase change material resistance switching behavior with resistance ratio >100 under electrical pulse measurements. TEM and Energy Dispersive Spectroscopy (EDS) studies of the Ga–Sb cells after ∼100 switching cycles revealed that partial SET or intermediate resistance states are attained by the variation of the grain size of the material as well as the Ga content in the A7 phase. A mechanism for a reversible composition control is proposed for analog cell performance. These results indicate that Te-free Ga–Sb binary alloys are potential candidates for analog PCM applications.more » « less