Jacks, H. C., Molina-Ruiz, M., Weber, M. H., Maldonis, J. J., Voyles, P. M., Abernathy, M. R., Metcalf, T. H., Liu, X., and Hellman, F. Structural tunability and origin of two-level systems in amorphous silicon. Retrieved from https://par.nsf.gov/biblio/10354669. Physical Review Materials 6.4 Web. doi:10.1103/PhysRevMaterials.6.045604.
Jacks, H. C., Molina-Ruiz, M., Weber, M. H., Maldonis, J. J., Voyles, P. M., Abernathy, M. R., Metcalf, T. H., Liu, X., & Hellman, F. Structural tunability and origin of two-level systems in amorphous silicon. Physical Review Materials, 6 (4). Retrieved from https://par.nsf.gov/biblio/10354669. https://doi.org/10.1103/PhysRevMaterials.6.045604
Jacks, H. C., Molina-Ruiz, M., Weber, M. H., Maldonis, J. J., Voyles, P. M., Abernathy, M. R., Metcalf, T. H., Liu, X., and Hellman, F.
"Structural tunability and origin of two-level systems in amorphous silicon". Physical Review Materials 6 (4). Country unknown/Code not available. https://doi.org/10.1103/PhysRevMaterials.6.045604.https://par.nsf.gov/biblio/10354669.
@article{osti_10354669,
place = {Country unknown/Code not available},
title = {Structural tunability and origin of two-level systems in amorphous silicon},
url = {https://par.nsf.gov/biblio/10354669},
DOI = {10.1103/PhysRevMaterials.6.045604},
abstractNote = {},
journal = {Physical Review Materials},
volume = {6},
number = {4},
author = {Jacks, H. C. and Molina-Ruiz, M. and Weber, M. H. and Maldonis, J. J. and Voyles, P. M. and Abernathy, M. R. and Metcalf, T. H. and Liu, X. and Hellman, F.},
}
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