Transition metal oxides such as BiVO 4 are promising photoelectrode materials for solar-to-fuel conversion applications. However, their performance is limited by the low carrier mobility (especially electron mobility) due to the formation of small polarons. Recent experimental studies have shown improved carrier mobility and conductivity by atomic doping; however the underlying mechanism is not understood. A fundamental atomistic-level understanding of the effects on small polaron transport is critical to future material design with high conductivity. We studied the small polaron hopping mobility in pristine and doped BiVO 4 by combining Landau–Zener theory and kinetic Monte Carlo (kMC) simulation fully from first-principles, and investigated the effect of dopant–polaron interactions on the mobility. We found that polarons are spontaneously formed at V in both pristine and Mo/W doped BiVO 4 , which can only be described correctly by density functional theory (DFT) with the Hubbard correction (DFT+U) or hybrid exchange-correlation functional but not local or semi-local functionals. We found that DFT+U and dielectric dependant hybrid (DDH) functionals give similar electron hopping barriers, which are also similar between the room temperature monoclinic phase and the tetragonal phase. The calculated electron mobility agrees well with experimental values, which is around 10 −4 cm 2 V −1 s −1 . We found that the electron polaron transport in BiVO 4 is neither fully adiabatic nor nonadiabatic, and the first and second nearest neighbor hoppings have significantly different electronic couplings between two hopping centers that lead to different adiabaticity and prefactors in the charge transfer rate, although they have similar hopping barriers. Without considering the detailed adiabaticity through Landau–Zener theory, one may get qualitatively wrong carrier mobility. We further computed polaron mobility in the presence of different dopants and showed that Cr substitution of V is an electron trap while Mo and W are “repulsive” centers, mainly due to the minimization of local lattice expansion by dopants and electron polarons. The dopants with “repulsive” interactions to polarons are promising for mobility improvement due to larger wavefunction overlap and delocalization of locally concentrated polarons.
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Detection and Correction of Delocalization Errors for Electron and Hole Polarons Using Density-Corrected DFT
Modeling polaron defects is an important aspect of computational materials science, but the description of unpaired spins in density functional theory (DFT) often suffers from delocalization error. To diagnose and correct the overdelocalization of spin defects, we report an implementation of density-corrected (DC-)DFT and its analytic energy gradient. In DC-DFT, an exchange-correlation functional is evaluated using a Hartree–Fock density, thus incorporating electron correlation while avoiding self-interaction error. Results for an electron polaron in models of titania and a hole polaron in Al-doped silica demonstrate that geometry optimization with semilocal functionals drives significant structural distortion, including the elongation of several bonds, such that subsequent single-point calculations with hybrid functionals fail to afford a localized defect even in cases where geometry optimization with the hybrid functional does localize the polaron. This has significant implications for traditional workflows in computational materials science, where semilocal functionals are often used for structure relaxation. DC-DFT calculations provide a mechanism to detect situations where delocalization error is likely to affect the results.
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- Award ID(s):
- 1955282
- NSF-PAR ID:
- 10355666
- Date Published:
- Journal Name:
- The Journal of Physical Chemistry Letters
- Volume:
- 13
- Issue:
- 23
- ISSN:
- 1948-7185
- Page Range / eLocation ID:
- 5275 to 5284
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1021/acs.jpclett.2c01187
