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1. Robust avalanche in GaN leading to record performance in avalanche photodiode

   https://doi.org/10.1109/IRPS45951.2020.9129299  

   Ji, Dong; Ercan, Burcu; Benson, Garret; Newaz, AKM; Chowdhury, Srabanti (April 2020, 2020 IEEE International Reliability Physics Symposium (IRPS))

   This abstract presents a study on the avalanche capability of GaN p-i-n diode leading to the achievement of 60A/W, 278V GaN avalanche photodiode. The GaN p-i-n diode fabricated on a free-standing GaN substrate was avalanche capable due to optimal edge termination. Both electrical and optical characterizations were conducted to validate the occurrence of avalanche in these devices. The device showed a positive temperature coefficient of breakdown voltage, which follows the nature of avalanche breakdown. The positive coefficient was measured to be 3.85 ×10^(-4) K^(-1) (0.1V/K) under a measurement temperature ranges from 300 K to 525 K. Moreover, the fabricated device showed excellent performance as an avalanche photo detector with record device metrics: (1) record high photoresponsivity of 60 A/W; (2) high optical gain of 10^5 ; and (3) low cark current. Robust avalanche is a key requirement in various device applications and necessary for their reliable operation. 

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2. Evolution of Low-Noise Avalanche Photodetectors

   https://doi.org/10.1109/JSTQE.2021.3092963  

   Campbell, Joe (March 2022, IEEE Journal of Selected Topics in Quantum Electronics)
3. Black phosphorus avalanche photodetector

   https://doi.org/10.1109/DRC.2017.7999500  

   Atalla, Mahmoud R.; Koester, Steven J. (August 2017, 75th Device Research Conference)
4. Control of intense light with avalanche-ionization plasma gratings

   https://doi.org/10.1364/OPTICA.503283  

   Edwards, M_R; Waczynski, S.; Rockafellow, E.; Manzo, L.; Zingale, A.; Michel, P.; Milchberg, H_M (November 2023, Optica)

   High-peak-power lasers are fundamental to high-field science: increased laser intensity has enabled laboratory astrophysics, relativistic plasma physics, and compact laser-based particle accelerators. However, the meter-scale optics required for multi-petawatt lasers to avoid light-induced damage make further increases in power challenging. Plasma tolerates orders-of-magnitude higher light flux than glass, but previous efforts to miniaturize lasers by constructing plasma analogs for conventional optics were limited by low efficiency and poor optical quality. We describe a new approach to plasma optics based on avalanche ionization of atomic clusters that produces plasma volume transmission gratings with dramatically increased diffraction efficiency. We measure an average efficiency of up to 36% and a single-shot efficiency of up to 60%, which is comparable to key components of high-power laser beamlines, while maintaining high spatial quality and focusability. These results suggest that plasma diffraction gratings may be a viable component of future lasers with peak power beyond 10 PW. 

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5. 60 A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525 K

   https://doi.org/10.1063/1.5140005  

   Ji, Dong; Ercan, Burcu; Benson, Garrett; Newaz, A. K.; Chowdhury, Srabanti (May 2020, Applied Physics Letters)