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1. Universal Critical Dynamics in High Resolution Neuronal Avalanche Data

   https://doi.org/10.1103/PhysRevLett.108.208102  

   Friedman, Nir ; Ito, Shinya ; Brinkman, Braden A. ; Shimono, Masanori ; DeVille, R. E. ; Dahmen, Karin A. ; Beggs, John M. ; Butler, Thomas C. ( May 2012 , Physical Review Letters)
2. Design methodology of high-gain III-V digital alloy avalanche photodiodes

   https://doi.org/10.1117/12.2578959  

   Ahmed, Sheikh Z. ; Zheng, Jiyuan ; Tan, Yaohua ; Campbell, Joe C. ; Ghosh, Avik W. ( March 2021 , Proceedings of the SPIE)

   Osiński, Marek ; Arakawa, Yasuhiko ; Witzigmann, Bernd (Ed.)
3. AlInAsSb Geiger-mode SWIR and eSWIR SPADs with high avalanche probability

   https://doi.org/10.1364/OE.513956  

   Herrera, Daniel_J ; Dadey, Adam_A ; March, Stephen_D ; Bank, Seth_R ; Campbell, Joe_C ( January 2024 , Optics Express)

   Single-photon avalanche diodes (SPADs) that are sensitive to photons in the Short-wave infrared and extended short-wave infrared (SWIR and eSWIR) spectra are important components for communication, ranging, and low-light level imaging. The high gain, low excess noise factor, and widely tunable bandgap of Al_xIn_1-xAs_ySb_1-yavalanche photodiodes (APDs) make them a suitable candidate for these applications. In this work, we report single-photon-counting results for a separate absorption, charge, and multiplication (SACM) Geiger-mode SPAD within a gated-quenching circuit. The single-photon avalanche probabilities surpass 80% at 80 K, corresponding with single-photon detection efficiencies of 33% and 12% at 1.55 µm and 2 µm, respectively.

    

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4. Temperature Dependence of Avalanche Breakdown of AlGaAsSb and AlInAsSb Avalanche Photodiodes

   https://doi.org/10.1109/JLT.2022.3185417  

   Guo, Bingtian ; Ahmed, Sheikh Z. ; Xue, Xingjun ; Rockwell, Ann-Kathryn ; Ha, Jaedu ; Lee, Seunghyun ; Liang, Baolai ; Jones, Andrew H. ; McArthur, J. Andrew ; Kodati, Sri H. ; et al ( September 2022 , Journal of Lightwave Technology)
5. Robust avalanche in GaN leading to record performance in avalanche photodiode

   https://doi.org/10.1109/IRPS45951.2020.9129299  

   Ji, Dong ; Ercan, Burcu ; Benson, Garret ; Newaz, AKM ; Chowdhury, Srabanti ( April 2020 , 2020 IEEE International Reliability Physics Symposium (IRPS))

   This abstract presents a study on the avalanche capability of GaN p-i-n diode leading to the achievement of 60A/W, 278V GaN avalanche photodiode. The GaN p-i-n diode fabricated on a free-standing GaN substrate was avalanche capable due to optimal edge termination. Both electrical and optical characterizations were conducted to validate the occurrence of avalanche in these devices. The device showed a positive temperature coefficient of breakdown voltage, which follows the nature of avalanche breakdown. The positive coefficient was measured to be 3.85 ×10^(-4) K^(-1) (0.1V/K) under a measurement temperature ranges from 300 K to 525 K. Moreover, the fabricated device showed excellent performance as an avalanche photo detector with record device metrics: (1) record high photoresponsivity of 60 A/W; (2) high optical gain of 10^5 ; and (3) low cark current. Robust avalanche is a key requirement in various device applications and necessary for their reliable operation. 

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