More Like this

1. Design methodology of high-gain III-V digital alloy avalanche photodiodes

   https://doi.org/10.1117/12.2578959  

   Ahmed, Sheikh Z.; Zheng, Jiyuan; Tan, Yaohua; Campbell, Joe C.; Ghosh, Avik W. (March 2021, Proceedings of the SPIE)

   Osiński, Marek; Arakawa, Yasuhiko; Witzigmann, Bernd (Ed.)
2. AlInAsSb Geiger-mode SWIR and eSWIR SPADs with high avalanche probability

   https://doi.org/10.1364/OE.513956  

   Herrera, Daniel_J; Dadey, Adam_A; March, Stephen_D; Bank, Seth_R; Campbell, Joe_C (January 2024, Optics Express)

   Single-photon avalanche diodes (SPADs) that are sensitive to photons in the Short-wave infrared and extended short-wave infrared (SWIR and eSWIR) spectra are important components for communication, ranging, and low-light level imaging. The high gain, low excess noise factor, and widely tunable bandgap of Al_xIn_1-xAs_ySb_1-yavalanche photodiodes (APDs) make them a suitable candidate for these applications. In this work, we report single-photon-counting results for a separate absorption, charge, and multiplication (SACM) Geiger-mode SPAD within a gated-quenching circuit. The single-photon avalanche probabilities surpass 80% at 80 K, corresponding with single-photon detection efficiencies of 33% and 12% at 1.55 µm and 2 µm, respectively. 

   more » « less
3. Temperature Dependence of Avalanche Breakdown of AlGaAsSb and AlInAsSb Avalanche Photodiodes

   https://doi.org/10.1109/JLT.2022.3185417  

   Guo, Bingtian; Ahmed, Sheikh Z.; Xue, Xingjun; Rockwell, Ann-Kathryn; Ha, Jaedu; Lee, Seunghyun; Liang, Baolai; Jones, Andrew H.; McArthur, J. Andrew; Kodati, Sri H.; et al (September 2022, Journal of Lightwave Technology)
4. Robust avalanche in GaN leading to record performance in avalanche photodiode

   https://doi.org/10.1109/IRPS45951.2020.9129299  

   Ji, Dong; Ercan, Burcu; Benson, Garret; Newaz, AKM; Chowdhury, Srabanti (April 2020, 2020 IEEE International Reliability Physics Symposium (IRPS))

   This abstract presents a study on the avalanche capability of GaN p-i-n diode leading to the achievement of 60A/W, 278V GaN avalanche photodiode. The GaN p-i-n diode fabricated on a free-standing GaN substrate was avalanche capable due to optimal edge termination. Both electrical and optical characterizations were conducted to validate the occurrence of avalanche in these devices. The device showed a positive temperature coefficient of breakdown voltage, which follows the nature of avalanche breakdown. The positive coefficient was measured to be 3.85 ×10^(-4) K^(-1) (0.1V/K) under a measurement temperature ranges from 300 K to 525 K. Moreover, the fabricated device showed excellent performance as an avalanche photo detector with record device metrics: (1) record high photoresponsivity of 60 A/W; (2) high optical gain of 10^5 ; and (3) low cark current. Robust avalanche is a key requirement in various device applications and necessary for their reliable operation. 

   more » « less
5. Black phosphorus avalanche photodetector

   https://doi.org/10.1109/DRC.2017.7999500  

   Atalla, Mahmoud R.; Koester, Steven J. (August 2017, 75th Device Research Conference)