The hafnate perovskites PbHfO3(antiferroelectric) and SrHfO3(“potential” ferroelectric) are studied as epitaxial thin films on SrTiO3(001) substrates with the added opportunity of observing a morphotropic phase boundary (MPB) in the Pb1−
Ferroelectric materials, which exhibit switchable polarization, are potential candidates for photovoltaic applications owing to their intriguing charge carrier separation mechanism associated with polarization and breaking of inversion symmetry. To overcome the low photocurrent of ferroelectrics, extensive efforts have focused on reducing their bandgaps to increase the optical absorption of the solar spectrum and thus the power conversion efficiency. Here, a new avenue of enhancing photovoltaic performance via engineering the polarization across a morphotropic phase boundary (MPB) is reported. Tetragonal compositions in the vicinity of the MPB in a PbTiO3‐Bi(Ni1/2Ti1/2)O3solid solution are shown to generate up to 3.6 kV cm−1photoinduced electric field and 6.2 µA cm−2short‐circuit photocurrent, multiple times higher than its pseudocubic counterpart under the same illumination conditions with excellent polarization retention. This enhancement allows the investigation of the correlation between the polarization switching and photovoltaic switching, which enables a controllable multistate photocurrent. Combined with a bandgap of 2.2 eV, this material exhibits a sizable photoresponse over a broad spectral range. These findings provide a new approach to improve the photovoltaic performance of ferroelectric materials and can expand their potential applications in optoelectronic devices.
more » « less- NSF-PAR ID:
- 10359910
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Electronic Materials
- Volume:
- 7
- Issue:
- 5
- ISSN:
- 2199-160X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
more » « less
Abstract x Srx HfO3system. The resulting (240)‐oriented PbHfO3(Pba 2) films exhibited antiferroelectric switching with a saturation polarization ≈53 µC cm−2at 1.6 MV cm−1, weak‐field dielectric constant ≈186 at 298 K, and an antiferroelectric‐to‐paraelectric phase transition at ≈518 K. (002)‐oriented SrHfO3films exhibited neither ferroelectric behavior nor evidence of a polarP 4mm phase . Instead, the SrHfO3films exhibited a weak‐field dielectric constant ≈25 at 298 K and no signs of a structural transition to a polar phase as a function of temperature (77–623 K) and electric field (–3 to 3 MV cm−1). While the lack of ferroelectric order in SrHfO3removes the potential for MPB, structural and property evolution of the Pb1−x Srx HfO3(0 ≤x < 1) system is explored. Strontium alloying increased the electric‐breakdown strength (E B) and decreased hysteresis loss, thus enhancing the capacitive energy storage density (U r) and efficiency (η). The composition, Pb0.5Sr0.5HfO3produced the best combination ofE B = 5.12 ± 0.5 MV cm−1,U r = 77 ± 5 J cm−3, and η = 97 ± 2%, well out‐performing PbHfO3and other antiferroelectric oxides. -
more » « less
Abstract Two-dimensional (2D) ternary materials recently generated interest in optoelectronics and energy-related applications, alongside their binary counterparts. To date, only a few naturally occurring layered 2D ternary materials have been explored. The plethora of benefits owed to reduced dimensionality prompted exploration of expanding non-layered ternary chalcogenides into the 2D realm. This work presents a templating method that uses 2D transition metal dichalcogenides as initiators to be converted into the corresponding ternary chalcogenide upon addition of copper, via a solution-phase synthesis, conducted in high boiling point solvents. The process starts with preparation of VSe2nanosheets, which are next converted into Cu3VSe4sulvanite nanosheets (NSs) which retain the 2D geometry while presenting an X-ray diffraction pattern identical with the one for the bulk Cu3VSe4. Both the scanning electron microscopy and transmission microscopy electron microscopy show the presence of quasi-2D morphology. Recent studies of the sulfur-containing sulvanite Cu3VS4highlight the presence of an intermediate bandgap, associated with enhanced photovoltaic (PV) performance. The Cu3VSe4nanosheets reported herein exhibit multiple UV–Vis absorption peaks, related to the intermediate bandgaps similar to Cu3VS4and Cu3VSe4nanocrystals. To test the potential of Cu3VSe4NSs as an absorber for solar photovoltaic devices, Cu3VSe4NSs thin-films deposited on FTO were subjected to photoelectrochemical testing, showing p-type behavior and stable photocurrents of up to ~ 0.036 mA/cm2. The photocurrent shows a ninefold increase in comparison to reported performance of Cu3VSe4nanocrystals. This proves that quasi-2D sulvanite nanosheets are amenable to thin-film deposition and could show superior PV performance in comparison to nanocrystal thin-films. The obtained electrical impedance spectroscopy signal of the Cu3VSe4 NSs-FTO based electrochemical cell fits an equivalent circuit with the circuit elements of solution resistance (Rs), charge-transfer resistance (Rct), double-layer capacitance (Cdl), and Warburg impedance (W). The estimated charge transfer resistance value of 300 Ω cm2obtained from the Nyquist plot provides an insight into the rate of charge transfer on the electrode/electrolyte interface.
-
more » « less
Abstract Next‐generation electronics and energy technologies can now be developed as a result of the design, discovery, and development of novel, environmental friendly lead (Pb)‐free ferroelectric materials with improved characteristics and performance. However, there have only been a few reports of such complex materials’ design with multi‐phase interfacial chemistry, which can facilitate enhanced properties and performance. In this context, herein, novel lead‐free piezoelectric materials (1‐
x )Ba0.95Ca0.05Ti0.95Zr0.05O3‐(x )Ba0.95Ca0.05Ti0.95Sn0.05O3, are reported, which are represented as (1‐x )BCZT‐(x )BCST, with demonstrated excellent properties and energy harvesting performance. The (1‐x )BCZT‐(x )BCST materials are synthesized by high‐temperature solid‐state ceramic reaction method by varyingx in the full range (x = 0.00–1.00). In‐depth exploration research is performed on the structural, dielectric, ferroelectric, and electro‐mechanical properties of (1‐x )BCZT‐(x )BCST ceramics. The formation of perovskite structure for all ceramics without the presence of any impurity phases is confirmed by X‐ray diffraction (XRD) analyses, which also reveals that the Ca2+, Zr4+, and Sn4+are well dispersed within the BaTiO3lattice. For all (1‐x )BCZT‐(x )BCST ceramics, thorough investigation of phase formation and phase‐stability using XRD, Rietveld refinement, Raman spectroscopy, high‐resolution transmission electron microscopy (HRTEM), and temperature‐dependent dielectric measurements provide conclusive evidence for the coexistence of orthorhombic + tetragonal (Amm2 +P4mm ) phases at room temperature. The steady transition ofAmm2 crystal symmetry toP4mm crystal symmetry with increasingx content is also demonstrated by Rietveld refinement data and related analyses. The phase transition temperatures, rhombohedral‐orthorhombic (TR‐O), orthorhombic‐ tetragonal (TO‐T), and tetragonal‐cubic (TC), gradually shift toward lower temperature with increasingx content. For (1‐x )BCZT‐(x )BCST ceramics, significantly improved dielectric and ferroelectric properties are observed, including relatively high dielectric constantε r≈ 1900–3300 (near room temperature),ε r≈ 8800–12 900 (near Curie temperature), dielectric loss, tanδ ≈ 0.01–0.02, remanent polarizationP r≈ 9.4–14 µC cm−2, coercive electric fieldE c≈ 2.5–3.6 kV cm−1. Further, high electric field‐induced strainS ≈ 0.12–0.175%, piezoelectric charge coefficientd 33≈ 296–360 pC N−1, converse piezoelectric coefficient ≈ 240–340 pm V−1, planar electromechanical coupling coefficientk p≈ 0.34–0.45, and electrostrictive coefficient (Q 33)avg≈ 0.026–0.038 m4C−2are attained. Output performance with respect to mechanical energy demonstrates that the (0.6)BCZT‐(0.4)BCST composition (x = 0.4) displays better efficiency for generating electrical energy and, thus, the synthesized lead‐free piezoelectric (1‐x )BCZT‐(x )BCST samples are suitable for energy harvesting applications. The results and analyses point to the outcome that the (1‐x )BCZT‐(x )BCST ceramics as a potentially strong contender within the family of Pb‐free piezoelectric materials for future electronics and energy harvesting device technologies. -
more » « less
Abstract Relaxor ferroelectrics (RFEs) are being actively investigated for energy‐storage applications due to their large electric‐field‐induced polarization with slim hysteresis and fast energy charging–discharging capability. Here, a novel nanograin engineering approach based upon high kinetic energy deposition is reported, for mechanically inducing the RFE behavior in a normal ferroelectric Pb(Zr0.52Ti0.48)O3(PZT), which results in simultaneous enhancement in the dielectric breakdown strength (
E DBS) and polarization. Mechanically transformed relaxor thick films with 4 µm thickness exhibit an exceptionalE DBSof 540 MV m−1and reduced hysteresis with large unsaturated polarization (103.6 µC cm−2), resulting in a record high energy‐storage density of 124.1 J cm−3and a power density of 64.5 MW cm−3. This fundamental advancement is correlated with the generalized nanostructure design that comprises nanocrystalline phases embedded within the amorphous matrix. Microstructure‐tailored ferroelectric behavior overcomes the limitations imposed by traditional compositional design methods and provides a feasible pathway for realization of high‐performance energy‐storage materials. -
more » « less
Abstract The ability to produce atomically precise, artificial oxide heterostructures allows for the possibility of producing exotic phases and enhanced susceptibilities not found in parent materials. Typical ferroelectric materials either exhibit large saturation polarization away from a phase boundary or large dielectric susceptibility near a phase boundary. Both large ferroelectric polarization and dielectric permittivity are attained wherein fully epitaxial (PbZr0.8Ti0.2O3)
n /(PbZr0.4Ti0.6O3)2n (n = 2, 4, 6, 8, 16 unit cells) superlattices are produced such that the overall film chemistry is at the morphotropic phase boundary, but constitutive layers are not. Long‐ (n ≥ 6) and short‐period (n = 2) superlattices reveal large ferroelectric saturation polarization (P s= 64 µC cm−2) and small dielectric permittivity (εr≈ 400 at 10 kHz). Intermediate‐period (n = 4) superlattices, however, exhibit both large ferroelectric saturation polarization (P s= 64 µC cm−2) and dielectric permittivity (εr= 776 at 10 kHz). First‐order reversal curve analysis reveals the presence of switching distributions for each parent layer and a third, interfacial layer wherein superlattice periodicity modulates the volume fraction of each switching distribution and thus the overall material response. This reveals that deterministic creation of artificial superlattices is an effective pathway for designing materials with enhanced responses to applied bias.
