In Situ Dielectric Al 2 O 3 /β‐Ga 2 O 3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition
- Award ID(s):
- 1931652
- Publication Date:
- NSF-PAR ID:
- 10360053
- Journal Name:
- Advanced Electronic Materials
- Volume:
- 7
- Issue:
- 11
- Page Range or eLocation-ID:
- Article No. 2100333
- ISSN:
- 2199-160X
- Publisher:
- Wiley Blackwell (John Wiley & Sons)
- Sponsoring Org:
- National Science Foundation
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