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Title: In Situ Dielectric Al 2 O 3 /β‐Ga 2 O 3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition
Authors:
 ;  ;  ;  ;  ;  ;  ;  
Award ID(s):
1931652
Publication Date:
NSF-PAR ID:
10360053
Journal Name:
Advanced Electronic Materials
Volume:
7
Issue:
11
Page Range or eLocation-ID:
Article No. 2100333
ISSN:
2199-160X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
National Science Foundation
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