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1. Heavy ion irradiation induced failure of gallium nitride high electron mobility transistors: effects of in-situ biasing

   https://doi.org/10.1088/1361-6463/accfa7  

   Rasel, Md Abu Jafar ; Schoell, Ryan ; Al-Mamun, Nahid Sultan ; Hattar, Khalid ; Harris, C. Thomas ; Haque, Aman ; Wolfe, Douglas E. ; Ren, Fan ; Pearton, Stephen J. ( May 2023 , Journal of Physics D: Applied Physics)

   While radiation is known to degrade AlGaN/GaN high-electron-mobility transistors (HEMTs), the question remains on the extent of damage governed by the presence of an electrical field in the device. In this study, we induced displacement damage in HEMTs in both ON and OFF states by irradiating with 2.8 MeV Au⁴⁺ion to fluence levels ranging from$1.72\times {10}^{10}$to$3.745\times {10}^{13}$ions cm⁻², or 0.001–2 displacement per atom (dpa). Electrical measurement is donein situ, and high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray (EDX), geometrical phase analysis (GPA), and micro-Raman are performed on the highest fluence of Au⁴⁺irradiated devices. The selected heavy ion irradiation causes cascade damage in the passivation, AlGaN, and GaN layers and at all associated interfaces. After just 0.1 dpa, the current density in the ON-mode device deteriorates by two orders of magnitude, whereas the OFF-mode device totally ceases to operate. Moreover, six orders of magnitude increase in leakage current and loss of gate control over the 2-dimensional electron gas channel are observed. GPA and Raman analysis reveal strain relaxation after a 2 dpa damage level in devices. Significant defects and intermixing of atoms near AlGaN/GaN interfaces and GaN layer are found from HRTEM and EDX analyses,more »which can substantially alter device characteristics and result in complete failure.

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2. Elucidating the active sites for CO ₂ electroreduction on ligand-protected Au ₂₅ nanoclusters

   https://doi.org/10.1039/c8cy01099d  

   Austin, Natalie ; Zhao, Shuo ; McKone, James R. ; Jin, Rongchao ; Mpourmpakis, Giannis ( January 2018 , Catalysis Science & Technology)

   Using density functional theory (DFT) calculations, we investigated the electrochemical reduction of CO 2 and the competing H 2 evolution reaction on ligand-protected Au 25 nanoclusters (NCs) of different charge states, Au 25 (SR) 18 q ( q = −1, 0, +1). Our results showed that regardless of charge state, CO 2 electroreduction over Au 25 (SR) 18 q NCs was not feasible because of the extreme endothermicity to stabilize the carboxyl (COOH) intermediate. When we accounted for the removal of a ligand (both –SR and –R) from Au 25 (SR) 18 q under electrochemical conditions, surprisingly we found that this is a thermodynamically feasible process at the experimentally applied potentials with the generated surface sites becoming active centers for electrocatalysis. In every case, the negatively charged NCs, losing a ligand from their surface during electrochemical conditions, were found to significantly stabilize the COOH intermediate, resulting in dramatically enhanced CO 2 reduction. The generated sites for CO 2 reduction were also found to be active for H 2 evolution, which agrees with experimental observations that these two processes compete. Interestingly, we found that the removal of an –R ligand from the negatively charged NC, resulted in a catalyst that wasmore »both active and selective for CO 2 reduction. This work highlights the importance of both the overall charge state and generation of catalytically active surface sites on ligand-protected NCs, while elucidating the CO 2 electroreduction mechanisms. Overall, our work rationalizes a series of experimental observations and demonstrates pathways to convert a very stable and catalytically inactive NC to an active electrocatalyst.« less
3. Mechanistic insight into copper cation exchange in cadmium selenide semiconductor nanocrystals using X-ray absorption spectroscopy

   https://doi.org/10.1038/s41467-020-20712-0  

   Khammang, Alex ; Wright, Joshua T. ; Meulenberg, Robert W. ( January 2021 , Nature Communications)

   In terms of producing new advances in sustainable nanomaterials, cation exchange (CE) of post-processed colloidal nanocrystals (NCs) has opened new avenues towards producing non-toxic energy materials via simple chemical techniques. The main processes governing CE can be explained by considering hard/soft acid/base theory, but the detailed mechanism of CE, however, has been debated and has been attributed to both diffusion and vacancy processes. In this work, we have performed in situ x-ray absorption spectroscopy to further understand the mechanism of the CE of copper in solution phase CdSe NCs. The x-ray data indicates clear isosbestic points, suggestive of cooperative behavior as previously observed via optical spectroscopy. Examination of the extended x-ray absorption fine structure data points to the observation of interstitial impurities during the initial stages of CE, suggesting the diffusion process is the fundamental mechanism of CE in this system.
4. Site selective adsorption of the spin crossover complex Fe(phen)2(NCS) on Au(111)

   https://doi.org/10.1088/1361-648X/ab808d  

   Beniwal, Sumit ; Sarkar, Suchetana ; Baier, Felix ; Weber, Birgit ; Dowben, Peter A. ; Enders, Axel ( May 2020 , Journal of Physics: Condensed Matter)

   The iron(II) spin crossover complex Fe(1,10-phenanthroline)₂(NCS)₂, dubbed Fe-phen, has been studied with scanning tunneling microscopy, after adsorption on the ‘herringbone’ reconstructed surface of Au(111) for sub-monolayer coverages. The Fe-phen molecules attach, through their NCS-groups, to the Au atoms of the fcc domains of the reconstructed surface only, thereby lifting the herringbone reconstruction. The molecules stack to form 1D chains, which run along the Au[110] directions. Neighboring Fe-phen molecules are separated by approximately 2.65 nm, corresponding to 9 atomic spacings in this direction. The molecular axis, defined by the two phenanthroline groups, is aligned perpendicular to the chain axis, along the Au$\left[22\overline{1}\right]$direction, thereby bridging over 5 atomic spacings, in this direction. Experimental evidence suggests that the molecular spins are locked in a mixed state in the sub-monolayer regime at temperatures between 100 K and 300 K.
5. The influence of crystal thickness and interlayer interactions on the properties of heavy ion irradiated MoS ₂

   https://doi.org/10.1088/2053-1583/ab817b  

   Isherwood, Liam H. ; Hennighausen, Zachariah ; Son, Seok-Kyun ; Spencer, Ben F. ; Wady, Paul T. ; Shubeita, Samir M. ; Kar, Swastik ; Casiraghi, Cinzia ; Baidak, Aliaksandr ( May 2020 , 2D Materials)

   Ion irradiation is a versatile tool to introduce controlled defects into two-dimensional (2D) MoS₂on account of its unique spatial resolution and plethora of ion types and energies available. In order to fully realise the potential of this technique, a holistic understanding of ion-induced defect production in 2D MoS₂crystals of different thicknesses is mandatory. X-ray photoelectron spectroscopy, electron diffraction and Raman spectroscopy show that thinner MoS₂crystals are more susceptible to radiation damage caused by 225 keV Xe⁺ions. However, the rate of defect production in quadrilayer and bulk crystals is not significantly different under our experimental conditions. The rate at which S atoms are sputtered as a function of radiation exposure is considerably higher for monolayer MoS₂, compared to bulk crystals, leading to MoO₃formation. P-doping of MoS₂is observed and attributed to the acceptor states introduced by vacancies and charge transfer interactions with adsorbed species. Moreover, the out-of-plane vibrational properties of irradiated MoS₂crystals are shown to be strongly thickness-dependent: in mono- and bilayer MoS₂, the confinement of phonons by defects results in a blueshift of the$A_{1g}$mode. Whereas, a redshift is observed in bulk crystals due to attenuation of the effective restoring forces acting on S atoms caused by vacanciesmore »in adjacent MoS₂layers. Consequently, the$A_{1g}$frequency of tri- and quadrilayer crystals is statistically invariant on account oft competition between phonon confinement effects and interlayer interactions. The$A_{1g}$linewidth is observed to decrease in bi- and trilayer crystals after low dose irradiation and is attributed to layer decoupling. This work shows that there is a complex interplay between defect production, crystal thickness and interlayer interactions in MoS₂. Our results demonstrate that ion irradiation is an effective tool to modulate the electronic, vibrational and structural properties of MoS₂, which may prove beneficial for practical applications.

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