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Charged excited states can accumulate on the surface of colloidal quantum dots (QDs), affecting their optoelectronic properties. In experimental samples, QDs often have non-stoichiometric structures, giving rise to cation-rich and anion-rich nanostructures. We explore the effect of charge on the ground- and excited-state properties of CdSe non-stoichiometric QDs (NS-QDs) of ∼1.5 nm in size using density functional theory calculations. We compare two cases: (i) NS- QDs with a charge introduced by direct hole or electron injection and (ii) neutral NS-QDs with one removed surface ligand (with a dangling bond). Our calculations reveal that a neutral dangling bond has an effect on the electronic structure similar to that of the electron injection for the Cd-rich NS-QDs or hole injection for the Se-rich NS-QDs. In Cd-rich structures, either the injection of an electron or the removal of a passivating ligand results in the surface-localized half-filled trap state inside the energy gap. For Se-rich structures, either the injection of a hole or the removal of a ligand introduces surface-localized unoccupied trap states inside the energy gap. As a result, the charge localization formed by these two approaches leads to an appearance of low-energy electronic transitions strongly red-shifted from the main excitonic band of NS-QDs. These transitions related to a negative charge or a dangling bond exhibit weak optical activity in Cd-rich NS-QDs. Transitions related to a positive charge or a dangling bond are optically forbidden in Se-rich NS-QDs. In contrast, electron injection in Se-rich NS-QDs strongly increases the optical activity of the lowest- red-shifted charge-originated states.
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Hot carrier relaxation dynamics in non-stoichiometric CdSe quantum dots: computational insights
Spatial confinement of charge carriers in nanosize semiconductor quantum dots (QDs) results in highly tunable, size-dependent optoelectronic properties that can be utilized in various commercial applications. Although in such nanostructures, non-stoichiometry is frequently encountered using conventional synthesis techniques, it is not often addressed or considered. Here, we perform ab initio molecular dynamics simulations on non-stoichiometric CdSe clusters to study the phonon-mediated charge carrier relaxation dynamics. We model cation-rich and anion-rich QDs passivated with monocharged neutralizing ligands of different sizes. Our studies confirm the presence of localized trap states at the valence band edge in only anion-rich QDs due to the presence of undercoordinated exposed surface Se atoms. Noteworthily, these localized states disappear when using bulkier ligands. Calculations reveal that the size of the ligands controls the crystal vibrations and electron–phonon coupling, while ligand coordination number affects the electronic structure. For a particular non-stoichiometric CdSe QD, a change of a ligand can either increase or decrease the total electron relaxation time compared to that of stoichiometric QDs. Our results emphasize the importance of ligand engineering in non-stoichiometric QDs for photoinduced dynamics and guide future work for the implementation of improved materials for optoelectronic devices.
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- PAR ID:
- 10439201
- Date Published:
- Journal Name:
- Journal of Materials Chemistry A
- Volume:
- 11
- Issue:
- 15
- ISSN:
- 2050-7488
- Page Range / eLocation ID:
- 8256 to 8264
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1039/D3TA00149K
