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Title: In Situ Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors
Authors:
 ;  ;  ;  ;  ;  
Award ID(s):
1719875 2039380
Publication Date:
NSF-PAR ID:
10306293
Journal Name:
physica status solidi (a)
Volume:
219
Issue:
4
Page Range or eLocation-ID:
Article No. 2100452
ISSN:
1862-6300
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
National Science Foundation
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