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Title: Quantum information processing with integrated silicon carbide photonics

Color centers in wide bandgap semiconductors are prominent candidates for solid-state quantum technologies due to their attractive properties including optical interfacing, long coherence times, and spin–photon and spin–spin entanglement, as well as the potential for scalability. Silicon carbide color centers integrated into photonic devices span a wide range of applications in quantum information processing in a material platform with quantum-grade wafer availability and advanced processing capabilities. Recent progress in emitter generation and characterization, nanofabrication, device design, and quantum optical studies has amplified the scientific interest in this platform. We provide a conceptual and quantitative analysis of the role of silicon carbide integrated photonics in three key application areas: quantum networking, simulation, and computing.

 
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Award ID(s):
2047564
NSF-PAR ID:
10364429
Author(s) / Creator(s):
 ;  ;  ;  
Publisher / Repository:
American Institute of Physics
Date Published:
Journal Name:
Journal of Applied Physics
Volume:
131
Issue:
13
ISSN:
0021-8979
Page Range / eLocation ID:
Article No. 130901
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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