skip to main content


This content will become publicly available on October 16, 2025

Title: Triangular cross-section grating couplers for integrated quantum nanophotonic hardware in silicon carbide
Triangular cross-section nanodevices are among the leading approaches for integrating color centers with photonics for applications in quantum information processing. We design periodic and aperiodic fishbone triangular grating couplers in silicon carbide. We optimize the designs for achieving up to ∼ 31% collection efficiency from color center integrated triangular devices to a microscopy system. Using an ion beam angle etching process, we demonstrate proof-of-principle fabrication of the designed devices for future implementation in wafer-scale quantum nanophotonics.  more » « less
Award ID(s):
2047564
PAR ID:
10567832
Author(s) / Creator(s):
; ; ;
Publisher / Repository:
Arxiv
Date Published:
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract Silicon carbide is evolving as a prominent solid-state platform for the realization of quantum information processing hardware. Angle-etched nanodevices are emerging as a solution to photonic integration in bulk substrates where color centers are best defined. We model triangular cross-section waveguides and photonic crystal cavities using Finite-Difference Time-Domain and Finite-Difference Eigensolver approaches. We analyze optimal color center positioning within the modes of these devices and provide estimates on achievable Purcell enhancement in nanocavities with applications in quantum communications. Using open quantum system modeling, we explore emitter-cavity interactions of multiple non-identical color centers coupled to both a single cavity and a photonic crystal molecule in SiC. We observe polariton and subradiant state formation in the cavity-protected regime of cavity quantum electrodynamics applicable in quantum simulation. 
    more » « less
  2. Abstract

    Triangular cross-section silicon carbide (SiC) photonic devices have been studied as an efficient and scalable route for integration of color centers into quantum hardware. In this work, we explore efficient collection and detection of color center emission in a triangular cross-section SiC waveguide by introducing a photonic crystal mirror on its one side and a superconducting nanowire single photon detector (SNSPD) on the other. Our modeled triangular cross-section devices with a randomly positioned emitter have a maximum coupling efficiency of 89% into the desired optical mode and a high coupling efficiency (>75%) in more than half of the configurations. For the first time, NbTiN thin films were sputtered on 4H-SiC and the electrical and optical properties of the thin films were measured. We found that the transport properties are similar to the case of NbTiN on SiO2substrates, while the extinction coefficient is up to 50% higher for 1680 nm wavelength. Finally, we performed finite-difference time-domain simulations of triangular cross-section waveguide integrated with an SNSPD to identify optimal nanowire geometries for efficient detection of light from transverse electric and transverse magnetic polarized modes.

     
    more » « less
  3. Angle-etching fabrication produces state-of-the-art color center triangular nanophotonic devices. We uncover how the photonic band gap is formed in the triangular geometry and utilized for efficient detection from SiC waveguide into overlaid NbTiN detectors. 
    more » « less
  4. Abstract

    Triangular cross-section color center photonics in silicon carbide is a leading candidate for scalable implementation of quantum hardware. Within this geometry, we model low-loss beam splitters for applications in key quantum optical operations such as entanglement and single-photon interferometry. We consider triangular cross-section single-mode waveguides for the design of a directional coupler. We optimize parameters for a 50:50 beam splitter. Finally, we test the experimental feasibility of the designs by fabricating triangular waveguides in an ion beam etching process and identify suitable designs for short-term implementation.

     
    more » « less
  5. Abstract

    Silicon carbide is among the leading quantum information material platforms due to the long spin coherence and single-photon emitting properties of its color center defects. Applications of silicon carbide in quantum networking, computing, and sensing rely on the efficient collection of color center emission into a single optical mode. Recent hardware development in this platform has focused on angle-etching processes that preserve emitter properties and produce triangularly shaped devices. However, little is known about the light propagation in this geometry. We explore the formation of photonic band gap in structures with a triangular cross-section, which can be used as a guiding principle in developing efficient quantum nanophotonic hardware in silicon carbide. Furthermore, we propose applications in three areas: the TE-pass filter, the TM-pass filter, and the highly reflective photonic crystal mirror, which can be utilized for efficient collection and propagating mode selection of light emission.

     
    more » « less