Dual-Storage-Port Nonvolatile SRAM Based on Back-End-of-the-Line Processed Hf 0.5 Zr 0.5 O₂ Ferroelectric Capacitors Towards 3D Selector-Free Cross-Point Memory
- PAR ID:
- 10364758
- Publisher / Repository:
- Institute of Electrical and Electronics Engineers
- Date Published:
- Journal Name:
- IEEE Journal of the Electron Devices Society
- Volume:
- 8
- ISSN:
- 2168-6734
- Page Range / eLocation ID:
- p. 935-938
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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