skip to main content


Title: Chemical modification in and on single phase [NiO] 0.5 [Al 2 O 3 ] 0.5 nanopowders produces “chocolate chip‐like” Ni x @[NiO] 0.5‐x [Al 2 O 3 ] 0.5 nanocomposite nanopowders
Abstract

Phase‐pure [NiO]0.5[Al2O3]0.5spinel nanoparticles (NPs) with limited aggregation were obtained via liquid‐feed flame spray pyrolysis (LF‐FSP) by combusting metalloorganic precursor solutions. Thereafter “chocolate chip‐like” Nix[NiO0.5‐x][Al2O3]0.5nanoparticles consisting of primary [NiO0.5‐x][Al2O3]0.5particles with average particle sizes of 40‐60 nm decorated with Ni metal particles (<10 nm in diameter) dispersed on the surface were synthesized by heat treating the spinel NPs at 800°C/7 h in flowing 5% H2:N2100 mL/min in a fluidized bed reactor. The synthesized materials were characterized using TEM, XRD, FTIR, and TGA/DTA. The Ni depleted areas consist primarily of γ‐Al2O3. The Ni content (800°C) was determined by TGA to be ≈11.3 wt.% based on TGA oxidation behavior. The successful synthesis of such nanocomposites with limited aggregation on a high temperature support provides a facile route to synthesize well‐defined NP catalysts. This work serves as a baseline study for an accompanying paper, wherein thin, flexible, dense films made from these same NPs are used as regenerable catalysts for carbon nanotube syntheses.

 
more » « less
NSF-PAR ID:
10447412
Author(s) / Creator(s):
 ;  ;  ;  
Publisher / Repository:
Wiley-Blackwell
Date Published:
Journal Name:
Journal of the American Ceramic Society
Volume:
102
Issue:
12
ISSN:
0002-7820
Page Range / eLocation ID:
p. 7145-7153
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract

    Intrinsic exchange bias is known as the unidirectional exchange anisotropy that emerges in a nominally single-component ferro-(ferri-)magnetic system. In this work, with magnetic and structural characterizations, we demonstrate that intrinsic exchange bias is a general phenomenon in (Ni, Co, Fe)-based spinel oxide films deposited on α-Al2O3(0001) substrates, due to the emergence of a rock-salt interfacial layer consisting of antiferromagnetic CoO from interfacial reconstruction. We show that in NixCoyFe3-x-yO4(111)/α-Al2O3(0001) films, intrinsic exchange bias and interfacial reconstruction have consistent dependences on Co concentration y, while the Ni and Fe concentration appears to be less important. This work establishes a family of intrinsic exchange bias materials with great tunability by stoichiometry and highlights the strategy of interface engineering in controlling material functionalities.

     
    more » « less
  2. Abstract

    In an effort to reconcile the various interpretations for the cation components of the 2p3/2observed in x-ray photoelectron spectroscopy (XPS) of several spinel oxide materials, the XPS spectra of both spinel alloy nanoparticles and crystalline thin films are compared. We observed that different components of the 2p3/2core level XPS spectra, of these inverse spinel thin films, are distinctly surface and bulk weighted, indicating surface-to-bulk core level shifts in the binding energies. Surface-to-bulk core level shifts in binding energies of Ni and Fe 2p3/2core levels of NiFe2O4thin film are observed in angle-resolved XPS. The ratio between surface-weighted components and bulk-weighted components of the Ni and Fe core levels shows appreciable dependency on photoemission angle, with respect to surface normal. XPS showed that the ferrite nanoparticles NixCo1−xFe2O4(x= 0.2, 0.5, 0.8, 1) resemble the surface of the NiFe2O4thin film. Surface-to-bulk core level shifts are also observed in CoFe2O4and NiCo2O4thin films but not as significantly as in NiFe2O4thin film. Estimates of surface stoichiometry of some spinel oxide nanoparticles and thin films suggested that the apportionment between cationic species present could be farther from expectations for thin films as compared to what is seen with nanoparticles.

     
    more » « less
  3. Hf0.5Zr0.5O2‐based materials have garnered significant attention for applications requiring ferroelectricity at the nanoscale. This behavior arises due to the stabilization of metastable phases at room temperature. However, the synthesis of phase pure Hf0.5Zr0.5O2remains a challenging problem in both thin films and nanoparticles. Herein, the crystallization of Hf0.5Zr0.5O2nanoparticles from an as‐synthesized amorphous phase is studied. By tailoring the aggregate nature of the intermediate amorphous nanoparticles via different drying processes, the crystallization pathway can be altered, resulting in significant differences in crystal structure, crystallite size, and crystallite morphology after calcination. X‐ray diffraction (XRD) and Rietveld refinement show the dominant crystallographic phase changes from a monoclinic structure to a cubic structure for samples with decreased aggregation. Samples prepared via freeze drying exhibit the most aggregation control and correspond with the observation of single‐crystalline particle aggregates and branching structures attributed to a crystallization by particle attachment mechanism. Herein, differing crystallization pathways lead to unique crystal morphologies that stabilize the traditionally high‐temperature phases of Hf0.5Zr0.5O2‐based materials that are necessary for functional applications.

     
    more » « less
  4. NiO/β-(Al x Ga 1− x ) 2 O 3 /Ga 2 O 3 heterojunction lateral geometry rectifiers with diameter 50–100  μm exhibited maximum reverse breakdown voltages >7 kV, showing the advantage of increasing the bandgap using the β-(Al x Ga 1− x ) 2 O 3 alloy. This Si-doped alloy layer was grown by metal organic chemical vapor deposition with an Al composition of ∼21%. On-state resistances were in the range of 50–2180 Ω cm 2 , leading to power figures-of-merit up to 0.72 MW cm −2 . The forward turn-on voltage was in the range of 2.3–2.5 V, with maximum on/off ratios >700 when switching from 5 V forward to reverse biases up to −100 V. Transmission line measurements showed the specific contact resistance was 0.12 Ω cm 2 . The breakdown voltage is among the highest reported for any lateral geometry Ga 2 O 3 -based rectifier. 
    more » « less
  5. X Ray Photoelectron Spectroscopy was used to measure valence band offsets for Al 2 O 3 deposited by Atomic Layer Deposition on α -(Al x Ga 1-x ) 2 O 3 alloys over a wide range of Al contents, x, from 0.26–0.74, corresponding to a bandgap range from 5.8–7 eV. These alloys were grown by Pulsed Laser Deposition. The band alignments were type I (nested) at x <0.5, with valence band offsets 0.13 eV for x = 0.26 and x = 0.46. At higher Al contents, the band alignment was a staggered alignment, with valence band offsets of − 0.07 eV for x = 0.58 and −0.17 for x = 0.74, ie. negative valence band offsets in both cases. The conduction band offsets are also small at these high Al contents, being only 0.07 eV at x = 0.74. The wide bandgap of the α -(Al x Ga 1-x ) 2 O 3 alloys makes it difficult to find dielectrics with nested band alignments over the entire composition range. 
    more » « less