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Title: GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy

We report optically and electrically pumped∼<#comment/>280nmdeep ultraviolet (DUV) light emitting diodes (LEDs) with ultra-thin GaN/AlN quantum disks (QDs) inserted into AlGaN nanorods by selective epitaxial regrowth using molecular beam epitaxy. The GaN/AlN QD LED has shown strong DUV emission distribution on the ordered nanorods and high internal quantum efficiency of 81.2%, as a result of strain release and reduced density of threading dislocations revealed by transmission electron microscopy. Nanorod assembly suppresses the lateral guiding mode of light, and light extraction efficiency can be increased from 14.9% for planar DUV LEDs to 49.6% for nanorod DUV LEDs estimated by finite difference time domain simulations. Presented results offer the potential to solve the issue of external quantum efficiency limitation of DUV LED devices.

 
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Award ID(s):
1710298
NSF-PAR ID:
10127690
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ;
Publisher / Repository:
Optical Society of America
Date Published:
Journal Name:
Optics Letters
Volume:
45
Issue:
1
ISSN:
0146-9592; OPLEDP
Format(s):
Medium: X Size: Article No. 121
Size(s):
Article No. 121
Sponsoring Org:
National Science Foundation
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