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1. Bond dissociation energies of diatomic transition metal nitrides

   https://doi.org/10.1063/5.0141182  

   Merriles, Dakota M. ; Knapp, Annie S. ; Barrera-Casas, Yexalen ; Sevy, Andrew ; Sorensen, Jason J. ; Morse, Michael D. ( February 2023 , The Journal of Chemical Physics)

   Resonant two-photon ionization (R2PI) spectroscopy has been used to measure the bond dissociation energies (BDEs) of the diatomic transition metal nitrides ScN, TiN, YN, MoN, RuN, RhN, HfN, OsN, and IrN. Of these, the BDEs of only TiN and HfN had been previously measured. Due to the many ways electrons can be distributed among the d orbitals, these molecules possess an extremely high density of electronic states near the ground separated atom limit. Spin–orbit and nonadiabatic interactions couple these states quite effectively, so that the molecules readily find a path to dissociation when excited above the ground separated atom limit. The result is a sharp drop in ion signal in the R2PI spectrum when the molecule is excited above this limit, allowing the BDE to be readily measured. Using this method, the values D₀(ScN) = 3.905(29) eV, D₀(TiN) = 5.000(19) eV, D₀(YN) = 4.125(24) eV, D₀(MoN) = 5.220(4) eV, D₀(RuN) = 4.905(3) eV, D₀(RhN) = 3.659(32) eV, D₀(HfN) = 5.374(4) eV, D₀(OsN) = 5.732(3) eV, and D₀(IrN) = 5.115(4) eV are obtained. To support the experimental findings, ab initio coupled-cluster calculations extrapolated to the complete basis set limit (CBS) were performed. With a semiempirical correction for spin–orbit effects, these coupled-clustermore »single double triple-CBS calculations give a mean absolute deviation from the experimental BDE values of 0.20 eV. A discussion of the periodic trends, summaries of previous work, and comparisons to isoelectronic species is also provided.

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2. Benchmark PhotoIonization Cross-Sections of Neutral Scandium from the Ground and Excited States

   https://doi.org/10.3390/atoms9040083  

   Tayal, Swaraj S. ; Zatsarinny, Oleg ( December 2021 , Atoms)

   The B-spline R-matrix method has been used to investigate cross-sections for photoionization of neutral scandium from the ground and excited states in the energy region from the 3d and 4s valence electron ionization thresholds to 25 eV. The initial bound states of Sc and the final residual Sc+ ionic states have been accurately calculated by combining the multiconfiguration Hartree-Fock method with the frozen-core close-coupling approach. The lowest 20 bound states of Sc I belonging to the ground 3d4s2 and excited 3d24s, 3d24p, 3d4s4p, 4s24p, and 3d3 configurations have been considered as initial states. The 81 LS final ionic states of Sc+ belonging to the terms of 3p63d2, 3p63d4l (l = 0–3), 3p63d5l (l = 0–3), 3p63d6s, 3p64s2, 3p64s4l (l = 0–3), 3p64s5l (l = 0–1), and 3p64p2 configurations have been included in the final-state close-coupling expansion. The cross-sections are dominated by complicated resonance structures in the low energy region converging to several Sc+ ionic thresholds. The inclusion of all these final ionic states has been noted to significantly impact the near-threshold resonance structures and background cross-sections. The important scattering channels for leaving the residual ion in various final states have been identified, and the 3d electron ionization channels have beenmore »noted to dominate the cross-sections at higher photon energies.« less
3. Thermochemistry and mechanisms of the Pt ⁺ + SO ₂ reaction from guided ion beam tandem mass spectrometry and theory

   https://doi.org/10.1063/5.0091510  

   Armentrout, P. B. ( May 2022 , The Journal of Chemical Physics)

   The kinetic energy dependences of the reactions of Pt + ( 2 D 5/2 ) with SO 2 were studied using a guided ion beam tandem mass spectrometer and theory. The observed cationic products are PtO + and PtSO + , with small amounts of PtS + , all formed in endothermic reactions. Modeling the kinetic energy dependent product cross sections allows determination of the product bond dissociation energies (BDEs): D 0 (Pt + –O) = 3.14 ± 0.11 eV, D 0 (Pt + –S) = 3.68 ± 0.31 eV, and D 0 (Pt + –SO) = 3.03 ± 0.12 eV. The oxide BDE agrees well with more precise literature values, whereas the latter two results are the first such measurements. Quantum mechanical calculations were performed for PtO + , PtS + , PtO 2 + , and PtSO + at the B3LYP and coupled-cluster with single, double, and perturbative triple [CCSD(T)] levels of theory using the def2-XZVPPD (X = T, Q) and aug-cc-pVXZ (X = T, Q, 5) basis sets and complete basis set extrapolations. These theoretical BDEs agree well with the experimental values. After including empirical spin–orbit corrections, the product ground states are determined as PtO + ( 4 Σ 3/2more »), PtS + ( 4 Σ 3/2 ), PtO 2 + ( 2 Σ g + ), and PtSO + ( 2 A′). Potential energy profiles including intermediates and transition states for each reaction were also calculated at the B3LYP/def2-TZVPPD level. Periodic trends in the thermochemistry of the group 9 metal chalcogenide cations are compared, and the formation of PtO + from the Pt + + SO 2 reaction is compared with those from the Pt + + O 2 , CO 2 , CO, and NO reactions.« less
4. On the formation and the isomer specific detection of methylacetylene (CH ₃ CCH), propene (CH ₃ CHCH ₂ ), cyclopropane (c-C ₃ H ₆ ), vinylacetylene (CH ₂ CHCCH), and 1,3-butadiene (CH ₂ CHCHCH ₂ ) from interstellar methane ice analogues

   https://doi.org/10.1039/C8CP03921F  

   Abplanalp, Matthew J. ; Góbi, Sándor ; Kaiser, Ralf I. ( March 2019 , Physical Chemistry Chemical Physics)

   Pure methane (CH 4 ) ices processed by energetic electrons under ultra-high vacuum conditions to simulate secondary electrons formed via galactic cosmic rays (GCRs) penetrating interstellar ice mantles have been shown to produce an array of complex hydrocarbons with the general formulae: C n H 2n+2 ( n = 4–8), C n H 2n ( n = 3–9), C n H 2n−2 ( n = 3–9), C n H 2n−4 ( n = 4–9), and C n H 2n−6 ( n = 6–7). By monitoring the in situ chemical evolution of the ice combined with temperature programmed desorption (TPD) studies and tunable single photon ionization coupled to a reflectron time-of-flight mass spectrometer, specific isomers of C 3 H 4 , C 3 H 6 , C 4 H 4 , and C 4 H 6 were probed. These experiments confirmed the synthesis of methylacetylene (CH 3 CCH), propene (CH 3 CHCH 2 ), cyclopropane (c-C 3 H 6 ), vinylacetylene (CH 2 CHCCH), 1-butyne (HCCC 2 H 5 ), 2-butyne (CH 3 CCCH 3 ), 1,2-butadiene (H 2 CCCH(CH 3 )), and 1,3-butadiene (CH 2 CHCHCH 2 ) with yields of 2.17 ± 0.95 × 10 −4 , 3.7 ±more »1.5 × 10 −3 , 1.23 ± 0.77 × 10 −4 , 1.28 ± 0.65 × 10 −4 , 4.01 ± 1.98 × 10 −5 , 1.97 ± 0.98 × 10 −4 , 1.90 ± 0.84 × 10 −5 , and 1.41 ± 0.72 × 10 −4 molecules eV −1 , respectively. Mechanistic studies exploring the formation routes of methylacetylene, propene, and vinylacetylene were also conducted, and revealed the additional formation of the 1,2,3-butatriene isomer. Several of the above isomers, methylacetylene, propene, vinylacetylene, and 1,3-butadiene, have repeatedly been shown to be important precursors in the formation of polycyclic aromatic hydrocarbons (PAHs), but until now their interstellar synthesis has remained elusive.« less
5. Electrical properties of α-Ga ₂ O ₃ films grown by halide vapor phase epitaxy on sapphire with α-Cr ₂ O ₃ buffers

   https://doi.org/10.1063/5.0090832  

   Polyakov, Alexander ; Nikolaev, Vladimir ; Stepanov, Sergey ; Almaev, Alexei ; Pechnikov, Alexei ; Yakimov, Eugene ; Kushnarev, Bogdan O. ; Shchemerov, Ivan ; Scheglov, Mikhail ; Chernykh, Alexey ; et al ( June 2022 , Journal of Applied Physics)

   We report on growth and electrical properties of α-Ga₂O₃films prepared by halide vapor phase epitaxy (HVPE) at 500 °C on α-Cr₂O₃buffers predeposited on sapphire by magnetron sputtering. The α-Cr₂O₃buffers showed a wide microcathodoluminescence (MCL) peak near 350 nm corresponding to the α-Cr₂O₃bandgap and a sharp MCL line near 700 nm due to the Cr⁺intracenter transition. Ohmic contacts to Cr₂O₃were made with both Ti/Au or Ni, producing linear current–voltage ( I– V) characteristics over a wide temperature range with an activation energy of conductivity of ∼75 meV. The sign of thermoelectric power indicated p-type conductivity of the buffers. Sn-doped, 2- μm-thick α-Ga₂O₃films prepared on this buffer by HVPE showed donor ionization energies of 0.2–0.25 eV, while undoped films were resistive with the Fermi level pinned at E_Cof 0.3 eV. The I– V and capacitance–voltage ( C– V) characteristics of Ni Schottky diodes on Sn-doped samples using a Cr₂O₃buffer indicated the presence of two face-to-face junctions, one between n-Ga₂O₃and p-Cr₂O₃, the other due to the Ni Schottky diode with n-Ga₂O₃. The spectral dependence of the photocurrent measured on the structure showed the presence of three major deep traps with optical ionization thresholds near 1.3, 2, and 2.8 eV. Photoinduced current transient spectroscopy spectra of the structures were dominated bymore »deep traps with an ionization energy of 0.95 eV. These experiments suggest another pathway to obtain p–n heterojunctions in the α-Ga₂O₃system.

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