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Title: Process Considerations for selective doping of poly-Si thin films with spin-on dopants and nickel silicide formation for planar thermoelectric devices
Award ID(s):
2110603
NSF-PAR ID:
10374297
Author(s) / Creator(s):
;
Date Published:
Journal Name:
Materials Science in Semiconductor Processing
Volume:
150
Issue:
C
ISSN:
1369-8001
Page Range / eLocation ID:
106941
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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