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Abstract We report a novel approach for realizing tunable/reconfigurable terahertz (THz) mesh filters on the basis of micromachined mesa‐array structures. In this approach, different filter patterns are generated virtually using photogenerated free carriers in a semiconducting mesa‐array structure to achieve superior tunability and reconfigurability. Micromachined mesa‐array structures enable the formation of high fidelity, optically generated mesh filter structures for THz frequencies. To evaluate the proposed filter designs, the optically patterned spatial modulation properties of mesa‐array structures were first evaluated. Reconfigurable mesh filter prototypes were then designed and simulated using silicon mesa arrays with 50 × 50 μm2square mesa unit cells. Simulations show that reconfigurable bandpass filters (BPFs) operating in the frequency range of 108–489 GHz with insertion losses of 0.82–1.13 dB can be achieved. By employing smaller unit cells, the frequency tuning range and filtering performance can be further improved. In addition to BPFs, other filter functionalities can also be realized utilizing the proposed approach. The wide tuning range and reconfigurability of the mesh filters demonstrate that the proposed approach is promising for developing tunable/reconfigurable circuits and components for advanced THz sensing, imaging, and communications.
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Tunable and reconfigurable bandstop filters enabled by optically controlled switching elements
Abstract The authors report a novel approach for designing tunable and reconfigurable bandstop filters by employing bias‐free optically‐controlled photoconductive radio frequency (RF) switching elements. To verify the effectiveness of the approach, a bandstop filter with two stopbands centred at 4.05 and 4.75 GHz was designed using a split‐ring‐coupled microstrip transmission line on RO3010 substrates. To enable reconfigurability, a micromachined Si chip with a thickness of ∼73 μm was embedded in the gap of each resonator. The tuning and reconfiguring of the filter are accomplished by selectively illuminating the Si chips using fibre‐coupled laser diodes with a wavelength of 808 nm. By turning on and off each laser diode, the filter stop bands can be dynamically reconfigured. In addition, the suppression of each stop band can be continuously and independently tuned by changing the light intensity from 0 to 20 W/cm2. With geometric scaling, this approach is promising for realizing a novel class of compact and high‐performance tunable and/or reconfigurable circuits from the microwave to mmW‐THz region.
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- PAR ID:
- 10377475
- Publisher / Repository:
- DOI PREFIX: 10.1049
- Date Published:
- Journal Name:
- Electronics Letters
- Volume:
- 58
- Issue:
- 25
- ISSN:
- 0013-5194
- Format(s):
- Medium: X Size: p. 985-987
- Size(s):
- p. 985-987
- Sponsoring Org:
- National Science Foundation
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