The strain of diffusion masks utilized during the disordering process is demonstrated to modify the curvature of the disordering aperture. As a result, the various disordering apertures formed are shown to significantly impact the electro-optical performance and spectral characteristics of impurity-induced disordered VCSELs designed for single-fundamental-mode operation. An investigation and analysis of the electro-optical performance and spectral characteristics of IID VCSELs as a result of varying diffusion mask strains is presented.
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Controlling impurity-induced disordering via mask strain for high-performance vertical-cavity surface-emitting lasers
Impurity-induced disordering (IID) in vertical-cavity surface-emitting lasers (VCSELs) has been shown to provide enhanced performance, such as achieving single fundamental-mode operation with higher output powers when compared to conventional VCSELs. This work presents the performance of oxide-confined, λ ~ 850 nm, VCSELs fabricated with varying IID aperture sizes which are characterized for maximum single-fundamental-mode output power. The electrical and optical performance of these devices are shown in comparison to traditional oxide-confined VCSELs and the optimal IID aperture size is experimentally validated. Control of the lateral-to-vertical (L/V) IID aperture profile is then demonstrated through engineering the strain induced by the IID diffusion mask. This extensive control over the IID aperture enables improved, manufacturable, IID VCSEL designs.
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- Award ID(s):
- 1640196
- NSF-PAR ID:
- 10380426
- Date Published:
- Journal Name:
- 2018 International Conference on Compound Semiconductor Manufacturing Technology
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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