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Title: Controlling impurity-induced disordering via mask strain for high-performance vertical-cavity surface-emitting lasers
Impurity-induced disordering (IID) in vertical-cavity surface-emitting lasers (VCSELs) has been shown to provide enhanced performance, such as achieving single fundamental-mode operation with higher output powers when compared to conventional VCSELs. This work presents the performance of oxide-confined, λ ~ 850 nm, VCSELs fabricated with varying IID aperture sizes which are characterized for maximum single-fundamental-mode output power. The electrical and optical performance of these devices are shown in comparison to traditional oxide-confined VCSELs and the optimal IID aperture size is experimentally validated. Control of the lateral-to-vertical (L/V) IID aperture profile is then demonstrated through engineering the strain induced by the IID diffusion mask. This extensive control over the IID aperture enables improved, manufacturable, IID VCSEL designs.  more » « less
Award ID(s):
1640196
PAR ID:
10380426
Author(s) / Creator(s):
; ; ;
Date Published:
Journal Name:
2018 International Conference on Compound Semiconductor Manufacturing Technology
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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