We propose an electroacoustic transistor enabled by reconfigurable topological insulators (TIs). The underlying structure of the device is a hexagonal lattice with a unit cell consisting of piezoelectric disks bonded to an aluminum substrate. First, we study the dispersion of flexural waves in the reconfigurable TI to identify Dirac cones in the band structure of a unit cell possessing C6v-symmetry. A topological bandgap can be opened by breaking inversion symmetry in the unit cell. This is achieved by altering the elastic response of one of the affixed piezoelectric disks using a negative impedance shunt circuit. Next, we analyze various topological states formed by interfacing mirror-symmetric unit cells. Sublattices with interface states are then combined to construct a transistor supercell which hosts at least two topologically protected channels for wave propagation. The amplitude of an incoming acoustic signal propagating in one of the topological channels, referred to as the ‘Gate’, is used to switch on or off a second topological channel between a wave source and receiver, mimicking the behavior of a field effect transistor in electronics. We employ finite element analysis to study the harmonic response of the transistor structure demonstrating the OFF and ON states of the device. Further, we present a mock-up of an electrical circuit which enables the switching of the topological channel between a wave source and receiver. The design of the proposed wave-based transistor promises the advantage of topological protection and may find applications in wearable devices, edge computing, and sensing in harsh environments.
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Fully integrated topological electronics
Topological insulators (TIs) have attracted significant attention in photonics and acoustics due to their unique physical properties and promising applications. Electronics has recently emerged as an exciting arena to study various topological phenomena because of its advantages in building complex topological structures. Here, we explore TIs on an integrated circuit (IC) platform with a standard complementary metal-oxide-semiconductor technology. Based on the Su–Schrieffer–Heeger model, we design a fully integrated topological circuit chain using multiple capacitively-coupled inductor–capacitor resonators. We perform comprehensive post-layout simulations on its physical layout to observe and evaluate the salient topological features. Our results demonstrate the existence of the topological edge state and the remarkable robustness of the edge state against various defects. Our work shows the feasibility and promise of studying TIs with IC technology, paving the way for future explorations of large-scale topological electronics on the scalable IC platform.
more » « less- Award ID(s):
- 1942900
- PAR ID:
- 10380538
- Publisher / Repository:
- Nature Publishing Group
- Date Published:
- Journal Name:
- Scientific Reports
- Volume:
- 12
- Issue:
- 1
- ISSN:
- 2045-2322
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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