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Title: Topological Insulator-Based Electroacoustic Transistors
We propose an electroacoustic transistor enabled by reconfigurable topological insulators (TIs). The underlying structure of the device is a hexagonal lattice with a unit cell consisting of piezoelectric disks bonded to an aluminum substrate. First, we study the dispersion of flexural waves in the reconfigurable TI to identify Dirac cones in the band structure of a unit cell possessing C6v-symmetry. A topological bandgap can be opened by breaking inversion symmetry in the unit cell. This is achieved by altering the elastic response of one of the affixed piezoelectric disks using a negative impedance shunt circuit. Next, we analyze various topological states formed by interfacing mirror-symmetric unit cells. Sublattices with interface states are then combined to construct a transistor supercell which hosts at least two topologically protected channels for wave propagation. The amplitude of an incoming acoustic signal propagating in one of the topological channels, referred to as the ‘Gate’, is used to switch on or off a second topological channel between a wave source and receiver, mimicking the behavior of a field effect transistor in electronics. We employ finite element analysis to study the harmonic response of the transistor structure demonstrating the OFF and ON states of the device. Further, we present a mock-up of an electrical circuit which enables the switching of the topological channel between a wave source and receiver. The design of the proposed wave-based transistor promises the advantage of topological protection and may find applications in wearable devices, edge computing, and sensing in harsh environments.  more » « less
Award ID(s):
1929849
PAR ID:
10477611
Author(s) / Creator(s):
;
Publisher / Repository:
American Society of Mechanical Engineers
Date Published:
ISBN:
978-0-7918-8740-0
Format(s):
Medium: X
Location:
Boston, Massachusetts, USA
Sponsoring Org:
National Science Foundation
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