skip to main content


Title: Thickness-scaling phonon resonance: A systematic study of hexagonal boron nitride from monolayers to bulk crystals
Phonons are important lattice vibrations that affect the thermal, electronic, and optical properties of materials. In this work, we studied infrared phonon resonance in a prototype van der Waals (vdW) material—hexagonal boron nitride (hBN)—with the thickness ranging from monolayers to bulk, especially on ultra-thin crystals with atomic layers smaller than 20. Our combined experimental and modeling results show a systematic increase in the intensity of in-plane phonon resonance at the increasing number of layers in hBN, with a sensitivity down to one atomic layer. While the thickness-dependence of the phonon resonance reveals the antenna nature of our nanoscope, the linear thickness-scaling of the phonon polariton wavelength indicates the preservation of electromagnetic hyperbolicity in ultra-thin hBN layers. Our conclusions should be generic for fundamental resonances in vdW materials and heterostructures where the number of constituent layers can be conveniently controlled. The thickness-dependent phonon resonance and phonon polaritons revealed in our work also suggest vdW engineering opportunities for desired thermal and nanophotonic functionalities.  more » « less
Award ID(s):
2005194
NSF-PAR ID:
10380552
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ;
Date Published:
Journal Name:
Journal of Applied Physics
Volume:
132
Issue:
13
ISSN:
0021-8979
Page Range / eLocation ID:
134302
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract

    Heat dissipation is a major limitation of high‐performance electronics. This is especially important in emerging nanoelectronic devices consisting of ultra‐thin layers, heterostructures, and interfaces, where enhancement in thermal transport is highly desired. Here, ultra‐high interfacial thermal conductance in encapsulated van der Waals (vdW) heterostructures with single‐layer transition metal dichalcogenides MX2(MoS2, WSe2, WS2) sandwiched between two hexagonal boron nitride (hBN) layers is reported. Through Raman spectroscopic measurements of suspended and substrate‐supported hBN/MX2/hBN heterostructures with varying laser power and temperature, the out‐of‐plane interfacial thermal conductance in the vertical stack is calibrated. The measured interfacial thermal conductance between MX2and hBN reaches 74 ± 25 MW m−2K−1, which is at least ten times higher than the interfacial thermal conductance of MX2in non‐encapsulation structures. Molecular dynamics (MD) calculations verify and explain the experimental results, suggesting a full encapsulation by hBN layers is accounting for the high interfacial conductance. This ultra‐high interfacial thermal conductance is attributed to the double heat transfer pathways and the clean and tight vdW interface between two crystalline 2D materials. The findings in this study reveal new thermal transport mechanisms in hBN/MX2/hBN structures and shed light on building novel hBN‐encapsulated nanoelectronic devices with enhanced thermal management.

     
    more » « less
  2. Abstract Optical manipulation of coherent phonon frequency in two-dimensional (2D) materials could advance the development of ultrafast phononics in atomic-thin platforms. However, conventional approaches for such control are limited to doping, strain, structural or thermal engineering. Here, we report the experimental observation of strong laser-polarization control of coherent phonon frequency through time-resolved pump-probe spectroscopic study of van der Waals (vdW) materials Fe 3 GeTe 2 . When the polarization of the pumping laser with tilted incidence is swept between in-plane and out-of-plane orientations, the frequencies of excited phonons can be monotonically tuned by as large as 3% (~100 GHz). Our first-principles calculations suggest the strong planar and vertical inter-atomic interaction asymmetry in layered materials accounts for the observed polarization-dependent phonon frequencies, as in-plane/out-of-plane polarization modifies the restoring force of the lattice vibration differently. Our work provides insightful understanding of the coherent phonon dynamics in layered vdW materials and opens up new avenues to optically manipulating coherent phonons. 
    more » « less
  3. Abstract

    Element isotopes are characterized by distinct atomic masses and nuclear spins, which can significantly influence material properties. Notably, however, isotopes in natural materials are homogenously distributed in space. Here, we propose a method to configure material properties by repositioning isotopes in engineered van der Waals (vdW) isotopic heterostructures. We showcase the properties of hexagonal boron nitride (hBN) isotopic heterostructures in engineering confined photon-lattice waves—hyperbolic phonon polaritons. By varying the composition, stacking order, and thicknesses of h10BN and h11BN building blocks, hyperbolic phonon polaritons can be engineered into a variety of energy-momentum dispersions. These confined and tailored polaritons are promising for various nanophotonic and thermal functionalities. Due to the universality and importance of isotopes, our vdW isotope heterostructuring method can be applied to engineer the properties of a broad range of materials.

     
    more » « less
  4. Abstract

    Resonant tunneling diodes with negative differential resistance (NDR) have attracted significant attention due to their unique quantum resonant tunneling phenomena and potential applications in terahertz emission/detection and high‐density logic/memory. In this paper, resonant tunneling devices, where the carriers tunnel through a hexagonal boron nitride (hBN) barrier sandwiched by two black phosphorus (BP) layers, are explored. The resonance occurs when the energy bands of the two black phosphorus layers are aligned. The conductive atomic force microscopy (CAFM) measurements reveal prominent NDR peaks with large peak‐to‐valley ratios at room temperature. It is found that the positions of the NDR peaks are very sensitive to the amplitude and the shape of the voltage waveform used in CAFM, which can be explained by the charge trapping effect. Furthermore, resonant tunneling transistors are demonstrated based on BP/hBN/BP stacks in which the locations of the NDR peaks are tunable by the electrostatic gating. As compared to the traditional tunneling diodes based on bulk materials, the tunneling devices based on thin boron nitride tunneling barrier and high mobility black phosphorus offer ultra‐high‐speed response. This feature, together with the NDR characteristics, provides the potential for applications in THz oscillators and multi‐value logic devices.

     
    more » « less
  5. Abstract

    Phonon polaritons in van der Waals materials reveal significant confinement accompanied with long propagation length: important virtues for tasks pertaining to the control of light and energy flow at the nanoscale. While previous studies of phonon polaritons have relied on relatively thick samples, here reported is the first observation of surface phonon polaritons in single atomic layers and bilayers of hexagonal boron nitride (hBN). Using antenna‐based near‐field microscopy, propagating surface phonon polaritons in mono‐ and bilayer hBN microcrystals are imaged. Phonon polaritons in monolayer hBN are confined in a volume about one million times smaller than the free‐space photons. Both the polariton dispersion and their wavelength–thickness scaling law are altered compared to those of hBN bulk counterparts. These changes are attributed to phonon hardening in monolayer‐thick crystals. The data reported here have bearing on applications of polaritons in metasurfaces and ultrathin optical elements.

     
    more » « less