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Topological lattice defects, such as dislocations and grain boundaries (GBs), are ubiquitously present in the bulk of quantum materials and externally tunable in metamaterials. In terms of robust modes, localized near the defect cores, they are instrumental in identifying topological crystals, featuring the hallmark band inversion at a finite momentum (translationally active type). Here we show that the GB superlattices in both two-dimensional and three-dimensional translationally active higher-order topological insulators harbor a myriad of dispersive modes that are typically placed at finite energies, but always well-separated from the bulk states. However, when the Burgers vector of the constituting edge dislocations points toward the gapless corners or hinges, both second-order and third-order topological insulators accommodate self-organized emergent topological metals near the zero energy (half-filling) in the GB mini Brillouin zone. We discuss possible material platforms where our proposed scenarios can be realized through the band-structure and defect engineering.
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A fractional corner anomaly reveals higher-order topology
Spectral measurements of boundary-localized topological modes are commonly used to identify topological insulators. For high-order insulators, these modes appear at boundaries of higher codimension, such as the corners of a two-dimensional material. Unfortunately, this spectroscopic approach is only viable if the energies of the topological modes lie within the bulk bandgap, which is not required for many topological crystalline insulators. The key topological feature in these insulators is instead fractional charge density arising from filled bulk bands, but measurements of such charge distributions have not been accessible to date. We experimentally measure boundary-localized fractional charge density in rotationally symmetric two-dimensional metamaterials and find one-fourth and one-third fractionalization. We then introduce a topological indicator that allows for the unambiguous identification of higher-order topology, even without in-gap states, and we demonstrate the associated higher-order bulk-boundary correspondence.
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- Award ID(s):
- 1641084
- PAR ID:
- 10184261
- Date Published:
- Journal Name:
- Science
- Volume:
- 368
- Issue:
- 6495
- ISSN:
- 0036-8075
- Page Range / eLocation ID:
- 1114 to 1118
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1126/science.aba7604
