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The rapid growth of point-of-care tests demands for biomolecule sensors with higher sensitivity and smaller size. We developed an optofluidic metasurface that combined silicon photonics and nanofluidics to achieve a lateral flow-through biosensor to fulfill the needs. The metasurface consists of a 2D array of silicon nanoposts fabricated on a silicon-on-insulator substrate. The device takes advantage of the high-Q resonant modes associated with the optical bound state and the nanofluidic delivery of analyte to overcome the problem of diffusion-limited detection that occurs in almost all conventional biosensors and offer a high refractive index sensitivity. We used rigorous coupled wave analysis and finite element analysis to design and optimize the device. We will present its photonic band diagram to identify the optical bound state and high-Q resonance modes near 1550 nm. The device was fabricated using e-beam lithography followed by a lift-off and reactive ion etching process. Reflectance of the sensor was measured using a tunable laser and a photodetector. The preliminary result shows a refractive index sensitivity of 720 nm/RIU. Furthermore, we implemented the optical metasurface as a lateral flow-through biosensor by covering the nanoposts using a PDMS cover. The nanofluidic channels are formed between the nanoposts for the flow of samples. The lateral flow-through sensor was used to detect the epidermal growth factor receptor (ErbB2), a widely used protein biomarker for breast cancer screening. The results show that the device can quantitatively measure the binding of ErBb2 antibody and ErBb2 by the continuous monitoring of the resonant wavelength shift.
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Reconfigurable photoinduced terahertz wave modulation using hybrid metal–silicon metasurface
We present a photoinduced reconfigurable metasurface to enable high spatial resolution terahertz (THz) wave modulation. Conventional photoinduced THz wave modulation uses optically induced conductive patterns on a semiconductor substrate to create programmable passive THz devices. The technique, albeit versatile and straightforward, suffers from limited performance resulting from the severe lateral diffusion of the photogenerated carriers that undermines the spatial resolution and conductivity contrast of the photoinduced conductive patterns. The proposed metasurface overcomes the limitation using a metal-jointed silicon mesa array with subwavelength-scaled dimensions on an insulator substrate. The structure physically restrains the lateral diffusion of the photogenerated carriers while ensuring the electrical conductivity between the silicon mesas , which is essential for THz wave modulation. The metasurface creates high-definition photoconductive patterns with dimensions smaller than the diffusion length of photogenerated carriers. The metasurface provides a modulation depth of −20 to −10 dB for the THz waves between 0.2 to 1.2 THz and supports a THz bandpass filter with a tunable central frequency. The new, to the best of our knowledge, design concept will benefit the implementation of reconfigurable THz devices.
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- Award ID(s):
- 1711631
- PAR ID:
- 10382390
- Date Published:
- Journal Name:
- Optics Letters
- Volume:
- 47
- Issue:
- 11
- ISSN:
- 0146-9592
- Page Range / eLocation ID:
- 2750
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract Terahertz (THz) technologies have become a focus of research in recent years due to their prominent role in envisioned future communication and sensing systems. One of the key challenges facing the field is the need for tools to enable agile engineering of THz wave fronts. Here, we describe a reconfigurable metasurface based on GaN technology with an array-of-subarrays architecture. This subwavelength-spaced array, under the control of a 1-bit digital coding sequence, can switch between an enormous range of possible configurations, providing facile access to nearly arbitrary wave front control for signals near 0.34 THz. We demonstrate wide-angle beam scanning with 1° of angular precision over 70 GHz of bandwidth, as well as the generation of multi-beam and diffuse wave fronts, with a switching speed up to 100 MHz. This device, offering the ability to rapidly reconfigure a propagating wave front for beam-forming or diffusively scattered wide-angle coverage of a scene, will open new realms of possibilities in sensing, imaging, and networking.more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript
- Journal Article:
- https://doi.org/10.1364/OL.457573
