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1. Circular photogalvanic spectroscopy of Rashba splitting in 2D hybrid organic–inorganic perovskite multiple quantum wells

   https://doi.org/10.1038/s41467-019-14073-6  

   Liu, Xiaojie; Chanana, Ashish; Huynh, Uyen; Xue, Fei; Haney, Paul; Blair, Steve; Jiang, Xiaomei; Vardeny, Z. V. (January 2020, Nature Communications)

   Abstract The two-dimensional (2D) Ruddlesden−Popper organic-inorganic halide perovskites such as (2D)-phenethylammonium lead iodide (2D-PEPI) have layered structure that resembles multiple quantum wells (MQW). The heavy atoms in 2D-PEPI contribute a large spin-orbit coupling that influences the electronic band structure. Upon breaking the inversion symmetry, a spin splitting (‘Rashba splitting’) occurs in the electronic bands. We have studied the spin splitting in 2D-PEPI single crystals using the circular photogalvanic effect (CPGE). We confirm the existence of Rashba splitting at the electronic band extrema of 35±10 meV, and identify the main inversion symmetry breaking direction perpendicular to the MQW planes. The CPGE action spectrum above the bandgap reveals spin-polarized photocurrent generated by ultrafast relaxation of excited photocarriers separated in momentum space. Whereas the helicity dependent photocurrent with below-gap excitation is due to spin-galvanic effect of the ionized spin-polarized excitons, where spin polarization occurs in the spin-split bands due to asymmetric spin-flip. 

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2. Large anomalous Hall effect and negative magnetoresistance in half-topological semimetals

   https://doi.org/10.1038/s42005-023-01469-6  

   Zhu, Yanglin; Huang, Cheng-Yi; Wang, Yu; Graf, David; Lin, Hsin; Lee, Seng Huat; Singleton, John; Min, Lujin; Palmstrom, Johanna C.; Bansil, Arun; et al (November 2023, Communications Physics)

   Abstract Proposed mechanisms for large intrinsic anomalous Hall effect (AHE) in magnetic topological semimetals include diverging Berry curvatures of Weyl nodes, anticrossing nodal rings or points of non-trivial bands. Here we demonstrate that a half-topological semimetal (HTS) state near a topological critical point can provide an alternative mechanism for a large AHE via systematic studies on an antiferromagnetic (AFM) half-Heusler compound TbPdBi. We not only observe a large AHE with tanΘ^H≈ 2 in its field-driven ferromagnetic (FM) phase, but also find a distinct Hall resistivity peak in its canted AFM phase. Moreover, we observe a large negative magnetoresistance with a value of ~98%. Our in-depth theoretical modelling indicates that these exotic transport properties originate from the HTS state which exhibits Berry curvature cancellation between the trivial spin-up and nontrivial spin-down bands. Our study offers alternative strategies for improved materials design for spintronics and other applications. 

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3. Angular dependence of spin-orbit torque in monolayer ${\mathrm{Fe}}_3{\mathrm{GeTe}}_2$

   https://doi.org/10.1103/PhysRevB.108.144422  

   Xue, Fei; Stiles, Mark D.; Haney, Paul M. (October 2023, Physical Review B)

   In ferromagnetic systems lacking inversion symmetry, an applied electric field can control the ferromagnetic order parameters through the spin-orbit torque. The prototypical example is a bilayer heterostructure composed of a ferromagnet and a heavy metal that acts as a spin current source. In addition to such bilayers, spin-orbit coupling can mediate spin-orbit torques in ferromagnets that lack bulk inversion symmetry. A recently discovered example is the two-dimensional monolayer ferromagnet Fe3GeTe2. In this paper, we use first-principles calculations to study the spin-orbit torque and ensuing magnetic dynamics in this material. By expanding the torque versus magnetization direction as a series of vector spherical harmonics, we find that higher order terms (up to ℓ=4) are significant and play important roles in the magnetic dynamics. They give rise to deterministic, magnetic field-free electrical switching of perpendicular magnetization. 

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4. Discovery of an Intrinsic Antiferromagnetic Semiconductor EuSc ₂ Te ₄ With Magnetism‐Driven Nonlinear Transport

   https://doi.org/10.1002/adfm.202424231  

   Lee, Seng_Huat; Zhao, Yufei; Gluscevich, Noble; Yi, Hemian; Morgan, Zachary; Cao, Huibo; Koo, Jahyun; Wang, Yu; He, Jingyang; Gopalan, Venkatraman; et al (March 2025, Advanced Functional Materials)

   Abstract Magnetic topological materials have recently emerged as a promising platform for studying quantum geometry by the nonlinear transport in thin film devices. In this work, an antiferromagnetic (AFM) semiconductor EuSc₂Te₄ as the first bulk crystal that exhibits quantum geometry‐driven nonlinear transport is reported. This material crystallizes into an orthorhombic lattice with AFM order below 5.2 K and a bandgap of less than 50 meV. The calculated band structure aligns with the angle‐resolved photoemission spectroscopy spectrum. The AFM order preserves combined space‐time inversion symmetry but breaks both spatial inversion and time‐reversal symmetry, leading to the nonlinear Hall effect (NLHE). Nonlinear Hall voltage measured in bulk crystals appears at zero field, peaks near the spin‐flop transition as the field increases, and then diminishes as the spin moments align into a ferromagnetic order. This field dependence, along with the scaling analysis of the nonlinear Hall conductivity, suggests that the NLHE of EuSc₂Te₄ involves contributions from quantum metric, in addition to extrinsic contributions, such as spin scattering and junction effects. Furthermore, this NLHE is found to have the functionality of broadband frequency mixing, indicating its potential applications in electronics. This work reveals a new avenue for studying magnetism‐induced nonlinear transport in magnetic materials. 

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5. Anisotropic dielectric function, direction dependent bandgap energy, band order, and indirect to direct gap crossover in α -(Al _x Ga _1−x ) ₂ O ₃ (0≤x≤1)

   https://doi.org/10.1063/5.0087602  

   Hilfiker, Matthew; Kilic, Ufuk; Stokey, Megan; Jinno, Riena; Cho, Yongjin; Xing, Huili Grace; Jena, Debdeep; Korlacki, Rafał; Schubert, Mathias (August 2022, Applied Physics Letters)

   Mueller matrix spectroscopic ellipsometry is applied to determine anisotropic optical properties for a set of single-crystal rhombohedral structure α-(Al x Ga 1− x ) 2 O 3 thin films (0 [Formula: see text] x [Formula: see text] 1). Samples are grown by plasma-assisted molecular beam epitaxy on m-plane sapphire. A critical-point model is used to render a spectroscopic model dielectric function tensor and to determine direct electronic band-to-band transition parameters, including the direction dependent two lowest-photon energy band-to-band transitions associated with the anisotropic bandgap. We obtain the composition dependence of the direction dependent two lowest band-to-band transitions with separate bandgap bowing parameters associated with the perpendicular ([Formula: see text] = 1.31 eV) and parallel ([Formula: see text] = 1.61 eV) electric field polarization to the lattice c direction. Our density functional theory calculations indicate a transition from indirect to direct characteristics between α-Ga 2 O 3 and α-Al 2 O 3 , respectively, and we identify a switch in band order where the lowest band-to-band transition occurs with polarization perpendicular to c in α-Ga 2 O 3 whereas for α-Al 2 O 3 the lowest transition occurs with polarization parallel to c. We estimate that the change in band order occurs at approximately 40% Al content. Additionally, the characteristic of the lowest energy critical point transition for polarization parallel to c changes from M 1 type in α-Ga 2 O 3 to M 0 type van Hove singularity in α-Al 2 O 3 . 

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