We demonstrate a high dynamic range Josephson parametric amplifier (JPA) in which the active nonlinear element is implemented using an array of rf-SQUIDs. The device is matched to the 50 Ω environment with a Klopfenstein-taper impedance transformer and achieves a bandwidth of 250–300 MHz with input saturation powers up to −95 dBm at 20 dB gain. A 54-qubit Sycamore processor was used to benchmark these devices, providing a calibration for readout power, an estimation of amplifier added noise, and a platform for comparison against standard impedance matched parametric amplifiers with a single dc-SQUID. We find that the high power rf-SQUID array design has no adverse effect on system noise, readout fidelity, or qubit dephasing, and we estimate an upper bound on amplifier added noise at 1.6 times the quantum limit. Finally, amplifiers with this design show no degradation in readout fidelity due to gain compression, which can occur in multi-tone multiplexed readout with traditional JPAs.
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Bias and Bias Line Effects on Wideband RF Power Amplifier Performance
The challenges associated with efficiently and effectively linearizing a nonlinear power amplifier (PA) over wide signal bandwidths are increasingly important to the design of 5G front-ends. Conventional digital linearization techniques are limited by absolute bandwidth, while the RF-domain nonlinear PA typically exhibits consistent fractional bandwidth even as the carrier frequency is increased. Therefore, RF-domain design techniques, like those focusing on bias-line impedance selection, are critical for overall distortion reduction. To evaluate bias-line effects, a demonstrator PA is here investigated over a range of Class-AB biases and over a range of drain inductance values. The characterization under two-tone and LTE-like modulated excitations with 10-MHz and 100-MHz instantaneous bandwidth shows that the conventional linear-efficiency trade-off in bias design does not necessarily hold true for wide instantaneous bandwidths. Additionally, techniques to synthesize a negative baseband impedance using low frequency feedback are discussed.
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- Award ID(s):
- 1846507
- PAR ID:
- 10386684
- Date Published:
- Journal Name:
- IEEE Wireless and Microwave Technology Conference
- Page Range / eLocation ID:
- 1 to 4
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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