Among group VI transition metal dichalcogenides, MoTe 2 is predicted to have the smallest energy offset between semiconducting 2H and semimetallic 1T′ states. This makes it an attractive phase change material for both electronic and optoelectronic applications. Here, we report fast, nondestructive, and full phase change in Al 2 O 3 -encapsulated 2H-MoTe 2 thin films to 1T′-MoTe 2 using rapid thermal annealing at 900 °C. Phase change was confirmed using Raman spectroscopy after a short annealing duration of 10 s in both vacuum and nitrogen ambient. No thickness dependence of the transition temperatures was observed for flake thickness ranging from 1.5 to 8 nm. These results represent a major step forward in understanding the structural phase transition properties of MoTe 2 thin films using external heating and underline the importance of surface encapsulation for avoiding thin film degradation.
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Pressure-induced metallization and 3d-like behavior in TcS 2
TcS 2 undergoes a charge transfer insulator to metal transition above 28 GPa. Laser annealing reveals a kinetically hindered high pressure arsenopyrite phase that is recoverable to ambient. The new phase is similar to the Mn-dichalcogenides rather than the expected Re-dichalcogenides and involves the formation of S–S and Tc–Tc bonds.
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- Award ID(s):
- 1904694
- PAR ID:
- 10388394
- Date Published:
- Journal Name:
- Chemical Communications
- Volume:
- 58
- Issue:
- 46
- ISSN:
- 1359-7345
- Page Range / eLocation ID:
- 6634 to 6637
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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