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Abstract Moiré superlattices created by the twisted stacking of two-dimensional crystals can host electronic bands with flat energy dispersion in which enhanced interactions promote correlated electron states. The twisted double bilayer graphene (TDBG), where two Bernal bilayer graphene are stacked with a twist angle, is such a moiré system with tunable flat bands. Here, we use gate-tuned scanning tunneling spectroscopy to directly demonstrate the tunability of the band structure of TDBG with an electric field and to show spectroscopic signatures of electronic correlations and topology for its flat band. Our spectroscopic experiments are in agreement with a continuum model of TDBG band structure and reveal signatures of a correlated insulator gap at partial filling of its isolated flat band. The topological properties of this flat band are probed with the application of a magnetic field, which leads to valley polarization and the splitting of Chern bands with a large effective g-factor.
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Moiré potential renormalization and ultra-flat bands induced by quasiparticle-plasmon coupling
Abstract Moiré potential profile can form flat electronic bands and manifest correlated states of electrons, where carrier doping is essential for observing those correlations. In this work, we uncover a hidden but remarkable many-electron effect: doped carriers form a two-dimensional plasmon and strongly couple with quasiparticles to renormalize moiré potential and realize ultra-flat bands. Using many-body perturbation theory, we demonstrate this effect in twisted MoS2/WS2heterobilayer. The moiré potential is significantly enhanced upon carrier doping, and the bandwidth is reduced by order of magnitude, leading to drastic quenching of electronic kinetic energy and stronger correlation. We further predict that the competition between correlated mechanisms can be effectively controlled via doping, giving hope to a quantum transition between Mott and charge-transfer insulating states. Our work reveals that the potential renormalization effect of doping is much more significant in determining and controlling many-electron electronic correlations than sole filling-factor tuning in semiconducting moiré crystals.
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- Award ID(s):
- 2124934
- PAR ID:
- 10391300
- Publisher / Repository:
- Nature Publishing Group
- Date Published:
- Journal Name:
- npj Computational Materials
- Volume:
- 9
- Issue:
- 1
- ISSN:
- 2057-3960
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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