An official website of the United States government
Abstract When a three-dimensional material is constructed by stacking different two-dimensional layers into an ordered structure, new and unique physical properties can emerge. An example is the delafossite PdCoO 2 , which consists of alternating layers of metallic Pd and Mott-insulating CoO 2 sheets. To understand the nature of the electronic coupling between the layers that gives rise to the unique properties of PdCoO 2 , we revealed its layer-resolved electronic structure combining standing-wave X-ray photoemission spectroscopy and ab initio many-body calculations. Experimentally, we have decomposed the measured VB spectrum into contributions from Pd and CoO 2 layers. Computationally, we find that many-body interactions in Pd and CoO 2 layers are highly different. Holes in the CoO 2 layer interact strongly with charge-transfer excitons in the same layer, whereas holes in the Pd layer couple to plasmons in the Pd layer. Interestingly, we find that holes in states hybridized across both layers couple to both types of excitations (charge-transfer excitons or plasmons), with the intensity of photoemission satellites being proportional to the projection of the state onto a given layer. This establishes satellites as a sensitive probe for inter-layer hybridization. These findings pave the way towards a better understanding of complex many-electron interactions in layered quantum materials.
more »
« less
Growth of PdCoO 2 films with controlled termination by molecular-beam epitaxy and determination of their electronic structure by angle-resolved photoemission spectroscopy
Utilizing the powerful combination of molecular-beam epitaxy (MBE) and angle-resolved photoemission spectroscopy (ARPES), we produce and study the effect of different terminating layers on the electronic structure of the metallic delafossite PdCoO 2 . Attempts to introduce unpaired electrons and synthesize new antiferromagnetic metals akin to the isostructural compound PdCrO 2 have been made by replacing cobalt with iron in PdCoO 2 films grown by MBE. Using ARPES, we observe similar bulk bands in these PdCoO 2 films with Pd-, CoO 2 -, and FeO 2 -termination. Nevertheless, Pd- and CoO 2 -terminated films show a reduced intensity of surface states. Additionally, we are able to epitaxially stabilize PdFe x Co 1− x O 2 films that show an anomaly in the derivative of the electrical resistance with respect to temperature at 20 K, but do not display pronounced magnetic order.
more »
« less
- PAR ID:
- 10392467
- Date Published:
- Journal Name:
- APL Materials
- Volume:
- 10
- Issue:
- 9
- ISSN:
- 2166-532X
- Page Range / eLocation ID:
- 091113
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow α-(AlxGa1−x)2O3 films on (110) sapphire substrates over the 0 < x < 0.95 range of aluminum content. In S-MBE, 99.98% of the gallium-containing molecular beam arrives at the substrate in a preoxidized form as gallium suboxide (Ga2O). This bypasses the rate-limiting step of conventional MBE for the growth of gallium oxide (Ga2O3) from a gallium molecular beam and allows us to grow fully epitaxial α-(AlxGa1−x)2O3 films at growth rates exceeding 1 µm/h and relatively low substrate temperature (Tsub = 605 ± 15 °C). The ability to grow α-(AlxGa1−x)2O3 over the nominally full composition range is confirmed by Vegard’s law applied to the x-ray diffraction data and by optical bandgap measurements with ultraviolet–visible spectroscopy. We show that S-MBE allows straightforward composition control and bandgap selection for α-(AlxGa1−x)2O3 films as the aluminum incorporation x in the film is linear with the relative flux ratio of aluminum to Ga2O. The films are characterized by atomic-force microscopy, x-ray diffraction, and scanning transmission electron microscopy (STEM). These α-(AlxGa1−x)2O3 films grown by S-MBE at record growth rates exhibit a rocking curve full width at half maximum of ≊ 12 arc secs, rms roughness <1 nm, and are fully commensurate for x ≥ 0.5 for 20–50 nm thick films. STEM imaging of the x = 0.78 sample reveals high structural quality and uniform composition. Despite the high structural quality of the films, our attempts at doping with silicon result in highly insulating films.more » « less
-
The development of low-cost, highly efficient and stable electrocatalysts for the oxygen evolution reaction (OER) is of great significance for many promising energy storage and conversion applications, including metal–air batteries and water splitting technology. Here we report a layer-structured Ca 0.5 CoO 2 nanofibers composed of interconnected ultrathin nanoplates, synthesized using an electrospinning process. The OER activity of Ca 0.5 CoO 2 can be dramatically improved by iron doping, and the overpotential of Ca 0.5 Co 1− x Fe x O 2 ( x = 0.25) is only 346 mV at a current density of 10 mA cm −2 . The mass activity and intrinsic activity of Ca 0.5 Co 0.75 Fe 0.25 O 2 at 1.6 V are, respectively, ∼18.7 and ∼11.4 times higher than those of Ca 0.5 CoO 2 . Iron doping modifies the electronic structure of Ca 0.5 CoO 2 , resulting in partial oxidation of the surface cobalt and increased amount of highly oxidative species (O 2 2− /O 2 ). Consequently, Ca 0.5 Co 0.75 Fe 0.25 O 2 nanofibers with tuned electronic states have shown great potential as cost-effective and efficient electrocatalysts for OER.more » « less
-
We report the use of suboxide molecular-beam epitaxy ( S-MBE) to grow β-Ga 2 O 3 at a growth rate of ∼1 µm/h with control of the silicon doping concentration from 5 × 10 16 to 10 19 cm −3 . In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98% Ga 2 O, i.e., gallium suboxide, is supplied. Directly supplying Ga 2 O to the growth surface bypasses the rate-limiting first step of the two-step reaction mechanism involved in the growth of β-Ga 2 O 3 by conventional MBE. As a result, a growth rate of ∼1 µm/h is readily achieved at a relatively low growth temperature ( T sub ≈ 525 °C), resulting in films with high structural perfection and smooth surfaces (rms roughness of <2 nm on ∼1 µm thick films). Silicon-containing oxide sources (SiO and SiO 2 ) producing an SiO suboxide molecular beam are used to dope the β-Ga 2 O 3 layers. Temperature-dependent Hall effect measurements on a 1 µm thick film with a mobile carrier concentration of 2.7 × 10 17 cm −3 reveal a room-temperature mobility of 124 cm 2 V −1 s −1 that increases to 627 cm 2 V −1 s −1 at 76 K; the silicon dopants are found to exhibit an activation energy of 27 meV. We also demonstrate working metal–semiconductor field-effect transistors made from these silicon-doped β-Ga 2 O 3 films grown by S-MBE at growth rates of ∼1 µm/h.more » « less
-
An electronic solid with itinerant carriers and localized magnetic moments represents a paradigmatic strongly correlated system. The electrical transport properties associated with the itinerant carriers, as they scatter off these local moments, have been scrutinized across a number of materials. Here, we analyze the transport characteristics associated with ultraclean PdCrO —a quasi-two-dimensional material consisting of alternating layers of itinerant Pd-electrons and Mott-insulating CrO layers—which shows a pronounced regime ofT-linear resistivity over a wide range of intermediate temperatures. By contrasting these observations to the transport properties in a closely related material PdCoO , where the CoO layers are band-insulators, we can rule out the traditional electron–phonon interactions as being responsible for this interesting regime. We propose a previously ignored electron-magneto-elastic interaction between the Pd-electrons, the Cr local moments and an out-of-plane phonon as the main scattering mechanism that leads to the significant enhancement of resistivity and aT-linear regime in PdCrO at temperatures far in excess of the magnetic ordering temperature. We suggest a number of future experiments to confirm this picture in PdCrO as well as other layered metallic/Mott-insulating materials.more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript
- Journal Article:
- https://doi.org/10.1063/5.0101837
