Producing Tunable Broadband Near-Infrared Emission through Co-Substitution in (Ga 1–x Mg x )(Ga 1–x Ge x )O 3 :Cr 3+
- Award ID(s):
- 1847701
- PAR ID:
- 10393481
- Date Published:
- Journal Name:
- ACS Applied Materials & Interfaces
- Volume:
- 14
- Issue:
- 45
- ISSN:
- 1944-8244
- Page Range / eLocation ID:
- 51157 to 51164
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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NiO/β-(Al x Ga 1− x ) 2 O 3 /Ga 2 O 3 heterojunction lateral geometry rectifiers with diameter 50–100 μm exhibited maximum reverse breakdown voltages >7 kV, showing the advantage of increasing the bandgap using the β-(Al x Ga 1− x ) 2 O 3 alloy. This Si-doped alloy layer was grown by metal organic chemical vapor deposition with an Al composition of ∼21%. On-state resistances were in the range of 50–2180 Ω cm 2 , leading to power figures-of-merit up to 0.72 MW cm −2 . The forward turn-on voltage was in the range of 2.3–2.5 V, with maximum on/off ratios >700 when switching from 5 V forward to reverse biases up to −100 V. Transmission line measurements showed the specific contact resistance was 0.12 Ω cm 2 . The breakdown voltage is among the highest reported for any lateral geometry Ga 2 O 3 -based rectifier.more » « less